Optoelectronic component and method for producing an optoelectronic component

1. An optoelectronic component, comprising:

a first organic functional layer structure;

a second organic functional layer structure; and

a charge generating layer structure between the first organic functional layer structure and the second organic functional layer structure,

wherein the charge generating layer structure comprises:

a first electron-conducting charge generating layer; and

a second electron-conducting charge generating layer, wherein the second electron-conducting charge generating layer is formed from a single substance, and

wherein the substance of the first electron-conducting charge generating layer is a substance selected from the group of substances consisting of: HAT-CN, Cu(I)pFBz, NDP-2, NDP-9, Bi(III)pFBz, F16CuPc.

2. The optoelectronic component as claimed in claim 1 , wherein the first electron-conducting charge generating layer is an intrinsic electron-conducting charge generating layer.

3. The optoelectronic component as claimed in claim 1 ,

wherein the first electron-conducting charge generating layer is formed from a single substance.

4. The optoelectronic component as claimed in claim 1 , wherein the substance of the second electron-conducting charge generating layer is a substance selected from the group of substances consisting of: NDN-26, MgAg, Cs 2 CO 3 , Cs 3 PO 4 , Na, Ca, K, Mg, Cs, Li, LiF.

5. The optoelectronic component as claimed in claim 1 , further comprising:

an interlayer arranged between the first electron-conducting charge generating layer and the second electron-conducting charge generating layer.

6. The optoelectronic component as claimed in claim 5 , wherein the interlayer comprises a phthalocyanine derivative.

7. The optoelectronic component as claimed in claim 1 , further comprising:

a hole transport layer arranged on or above the first electron-conducting charge generating layer; and

an electron transport layer;

wherein the second electron-conducting charge generating layer is arranged on or above the electron transport layer.

8. The optoelectronic component as claimed in claim 7 , wherein the hole transport layer is formed from an intrinsically hole-conducting substance or from a substance mixture comprising matrix and p-type dopant.

9. The optoelectronic component as claimed in claim 1 , further comprising:

a first electrode;

wherein the first organic functional layer structure is arranged on or above the first electrode;

a second electrode;

wherein the second electrode is arranged on or above the second organic functional layer structure.

10. The optoelectronic component as claimed in claim 1 , designed as an organic light emitting diode.

11. A method for producing an optoelectronic component, the method comprising:

forming a first organic functional layer structure;

forming a charge generating layer structure on or above or on the first organic functional layer structure;

forming a second organic functional layer structure on or above the charge generating layer structure, wherein said forming the charge generating layer structure comprises:

forming a second electron-conducting charge generating layer on or above the first organic functional layer structure, wherein the second electron-conducting charge generating layer is formed from a single substance; and

forming a first electron-conducting charge generating layer on or above the electron-conducting charge generating layer, and

wherein the substance of the first electron-conducting charge generating layer is a substance selected from the group of substances consisting of: HAT-CN, Cu(I)pFBz, NDP-2, NDP-9, Bi(III)pFBz, F16CuPc.

12. The method as claimed in claim 11 ,

wherein the substance of the second electron-conducting charge generating layer is a substance selected from the group of substances consisting of: NDN-26, MgAg, Cs 2 CO 3 , Cs 3 PO 4 , Na, Ca, K, Mg, Cs, Li, LiF.

13. The method as claimed in claim 11 , further comprising:

forming an electron transport layer;

forming the second electron-conducting charge generating layer on or above the electron transport layer;

forming a hole transport layer on or above the first electron-conducting charge generating layer.

14. The method as claimed in claim 11 , further comprising:

forming a first electrode;

forming the first organic functional layer structure on or above the first electrode;

forming a second electrode on or above the second organic functional layer structure.

15. The method as claimed in claim 11 ,

wherein the second electron-conducting charge generating layer is formed on the first organic functional layer structure; and wherein the conductivity of the electron-conducting charge generating layer is increased; and/or

wherein the first electron-conducting charge generating layer is formed on the second electron-conducting charge generating layer or an interlayer; and wherein the conductivity of the second electron-conducting charge generating layer is increased.

16. The method as claimed in claim 15 ,

wherein the conductivity is increased by means of irradiation with electromagnetic radiation and/or by means of the action of a temperature change.

17. The method as claimed in claim 11 ,

wherein the optoelectronic component is produced as an organic light emitting diode.