Granted Patent B2

US 9,290,695 · App. 14/401,599 · Granted Mar 22, 2016

Abstract

Claims (13)

1. A manufacturing method of a thin-film semiconductor device, the manufacturing method comprising:

forming an aluminum oxide film having film density of 2.80 g/cm 3 to 3.25 g/cm 3 above an oxide semiconductor layer;

providing a through-hole in the aluminum oxide film by etching the aluminum oxide film with use of an etching solution, the etching solution including phosphoric acid having concentration of 30% by weight to 80% by weight, nitric acid having concentration of 10% by weight or less, and surfactant having concentration of 0.0005% by weight to 0.0050% by weight; and

embedding, in the through-hole provided in the aluminum oxide film, an electrode to be electrically connected with the oxide semiconductor layer.

2. The manufacturing method of claim 1 , wherein

the phosphoric acid has concentration of 50% by weight to 70% by weight, and

the nitric acid has concentration of 2% by weight to 4% by weight.

3. The manufacturing method of claim 1 , further comprising, between forming the aluminum oxide film and providing the through-hole in the aluminum oxide film:

forming a protection film on the aluminum oxide film;

providing a through-hole in the protection film by etching the protection film with use of fluorine-based gas; and

performing plasma processing, with use of oxygen-based gas and without fluorine-based gas, on part of the aluminum oxide film that is exposed through the through-hole provided in the protection film.

4. The manufacturing method of claim 3 , wherein

the protection film has a single-layer structure consisting of any one of a silicon nitride film, a silicon oxide film, and a silicon oxynitride film, or a multi-layer structure consisting of at least two of the silicon nitride film, the silicon oxide film, and the silicon oxynitride film.

Assignments (6)