Optoelectronic module and method for producing an optoelectronic module
View Patent ↗An optoelectronic module has at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has a layer having a first conductivity, a layer having a second conductivity, a radiation surface and a contact surface which lies opposite the radiation surface. A contact is attached to the radiation surface. A frame made of a potting compound laterally encloses the semiconductor chip in at least some regions such that the radiation surface and the contact surface are substantially free of the potting compound. A first contact structure is arranged in at least some regions on the frame and in at least some regions on the contact surface. A second contact structure is arranged in at least some regions on the frame and in at least some regions on the contact of the radiation surface.
1. An optoelectronic module comprising:
a semiconductor chip for emitting electromagnetic radiation, the semiconductor chip having a layer having a first conductivity, a layer having a second conductivity, an emission surface and a contact surface situated opposite the emission surface;
a contact on the emission surface;
a frame composed of potting compound, the frame enclosing the semiconductor chip laterally at least regionally in such a way that the emission surface and the contact surface are substantially free of potting compound;
a first contact structure, at least regionally arranged on the frame and at least regionally arranged on the contact surface, in electrical contact with the layer having the first conductivity;
a second contact structure, at least regionally arranged on the frame and at least regionally arranged on the contact of the emission surface, in electrical contact with the layer having the second conductivity;
a mixing element to spatially intermix electromagnetic radiation, wherein the mixing element is disposed downstream of the semiconductor chip in an emission direction; and
a structured mirror layer or a structured scattering layer arranged at least regionally between the frame and the mixing element.
2. The optoelectronic module according to claim 1 , wherein:
the contact on the emission surface has a transparent contact layer, wherein the transparent contact layer covers the emission surface over the whole area;
the emission surface is free of metallic contact structures and free of a contact pad; and
the transparent contact layer is in direct contact with the contact structure.
3. The optoelectronic module according to claim 1 , wherein the first contact structure is applied on a side of the frame that adjoins the contact surface and wherein the second contact structure is applied on a side of the frame that adjoins the emission surface.
4. The optoelectronic module according to claim 1 , wherein an electrically insulating insulation layer is applied on a side of the frame that adjoins the contact surface and on the contact surface and a heat sink is applied on the insulation layer.
5. The optoelectronic module according to claim 1 , further comprising a transparent refractive index matching element between the emission surface and the mixing element, wherein the refractive index of the transparent refractive index matching element is between the refractive index of the semiconductor chip and the refractive index of the mixing element.
6. The optoelectronic module according to claim 1 , further comprising a second semiconductor chip adjacent to the semiconductor chip.
7. The optoelectronic module according to claim 6 , wherein the semiconductor chip and the second semiconductor chip are interconnected in series and/or in parallel with one another.
8. The optoelectronic module according to claim 6 , wherein a thickness of the mixing element substantially corresponds to a distance between adjacent semiconductor chips.
9. The optoelectronic module according to claim 6 , comprising an electrical feedthrough in the frame, wherein the electrical feedthrough electrically conductively connects the first contact structure of the semiconductor chip to a second contact structure of the second semiconductor chip.
10. The optoelectronic module according to claim 1 , wherein the mixing element has, at an underside facing the semiconductor chip, a cavity filled with a conversion element, wherein the cavity is disposed downstream of the semiconductor chip in the emission direction.
11. An optoelectronic module comprising:
a semiconductor chip for emitting electromagnetic radiation, the semiconductor chip having a layer having a first conductivity, a layer having a second conductivity, an emission surface and a contact surface situated opposite the emission surface;
a contact on the emission surface;
a frame composed of potting compound, the frame enclosing the semiconductor chip laterally at least regionally in such a way that the emission surface and the contact surface are substantially free of potting compound;
a first contact structure, at least regionally arranged on the frame and at least regionally arranged on the contact surface, in electrical contact with the layer having the first conductivity;
a second contact structure, at least regionally arranged on the frame and at least regionally arranged on the contact of the emission surface, in electrical contact with the layer having the second conductivity;
an electrically insulating insulation layer disposed on a side of the frame that adjoins the contact surface and on the contact surface; and
a metallic heat sink overlying the insulation layer.
12. The optoelectronic module according to claim 11 , further comprising a mixing element for spatially intermixing electromagnetic radiation, wherein the mixing element is disposed downstream of the semiconductor chip in an emission direction.
13. The optoelectronic module according to claim 12 , further comprising a structured mirror layer or a structured scattering layer at least regionally between the frame and the mixing element.