Light-emitting device, light-emitting device package, and light unit
A light-emitting device, according to one embodiment, comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer which is underneath the first conductive semiconductor layer, and a second conductive semiconductor layer which is underneath the active layer; a reflective electrode, which is arranged under the light-emitting structure; and an electrode which is arranged inside the first conductive semiconductor layer and comprises a conductive ion injection layer.
1. A light-emitting device comprising:
a light-emitting structure comprising a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer;
a reflective electrode under the light-emitting structure; and
an electrode arranged inside the first conductive semiconductor layer and comprising a conductive ion implantation layer,
wherein the electrode comprises a plurality of wires disposed in the first conductive semiconductor layer and a connection wire disposed in the first conductive semiconductor layer to electrically connect the wires to each other.
2. The light-emitting device of claim 1 , wherein the electrode comprises at least one selected from the group consisting of Ti, Al and Si.
3. The light-emitting device of claim 1 , wherein the electrode allows incident light to pass therethrough.
4. The light-emitting device of claim 1 , wherein the electrode has a line width in a range of 1 μm to 100 μm.
5. The light-emitting device of claim 1 , wherein the electrode is formed with a depth in a range of 50 nm to 100 nm.
6. The light-emitting device of claim 1 , wherein the electrode is spaced apart from the active layer.
7. The light-emitting device of claim 6 , wherein the electrode is spaced apart from the active layer by at least 100 nm.
8. The light-emitting device of claim 1 , further comprising a pad part electrically connected to the electrode.
9. The light-emitting device of claim 8 , wherein the pad part is disposed on the first conductive semiconductor layer.
10. The light-emitting device of claim 8 , wherein the pad part makes contact with the electrode or the first conductive semiconductor layer.
11. A light-emitting device package comprising:
a body;
a light-emitting device on the body; and
first and second lead electrodes electrically connected to the light-emitting device,
wherein the light-emitting device comprises a light-emitting structure comprising a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a reflective electrode under the light-emitting structure; and an electrode arranged inside the first conductive semiconductor layer and comprising a conductive ion implantation layer,
wherein the electrode comprises a plurality of wires disposed in the first conductive semiconductor layer and a connection wire disposed in the first conductive semiconductor layer to electrically connect the wires to each other.
12. The light-emitting device package of claim 11 , wherein the electrode comprises at least one selected from the group consisting of Ti, Al and Si.
13. The light-emitting device package of claim 11 , wherein the electrode allows incident light to pass therethrough.
14. The light-emitting device package of claim 11 , wherein the electrode has a line width in a range of 1 μm to 100 μm.
15. The light-emitting device package of claim 11 , wherein the electrode is formed with a depth in a range of 50 nm to 100 nm.
16. The light-emitting device package of claim 15 , wherein the electrode is spaced apart from the active layer by at least 100 nm.
17. The light-emitting device package of claim 11 , further comprising a pad part electrically connected to the electrode.
18. The light-emitting device package of claim 17 , wherein the pad part is disposed on the first conductive semiconductor layer.
19. A light unit comprising:
a substrate;
a light-emitting device on the substrate; and
an optical member serving as an optical path for light emitted from the light -emitting device,
wherein the light-emitting device comprises a light-emitting structure comprising a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a reflective electrode under the light-emitting structure; and an electrode arranged inside the first conductive semiconductor layer and comprising a conductive ion implantation layer,
wherein the electrode comprises a plurality of wires disposed in the first conductive semiconductor layer and a connection wire disposed in the first conductive semiconductor layer to electrically connect the wires to each other.
20. The light unit of claim 19 , wherein the electrode comprises at least one selected from the group consisting of Ti, Al and Si.