Light-emitting device, light-emitting device package, and light unit
A light-emitting device, according to one embodiment, comprises: a transparent conductive oxide film; an active layer which comes into contact with a lower surface of the transparent conductive oxide layer; a first conductive semiconductor layer which comes into contact with a lower surface of the active layer; a reflective electrode which is electrically connected to the first conductive semiconductor layer; and a first electrode electrically connected to the transparent conductive oxide layer.
1. A light-emitting device comprising:
a transparent conductive oxide layer;
an active layer making direct contact with a bottom surface of the transparent conductive oxide layer;
a first conductive semiconductor layer making contact with a bottom surface of the active layer;
a reflective electrode electrically connected to the first conductive semiconductor layer; and
a first electrode electrically connected to the transparent conductive oxide layer, wherein a first barrier layer that constitutes the active layer includes a nitride semiconductor including In or Al, and wherein the first barrier layer makes direct contact with the bottom surface of the transparent conductive oxide layer.
2. The light-emitting device of claim 1 , wherein the transparent conductive oxide layer includes at least one of ITO and ZnO.
3. The light-emitting device of claim 1 , wherein the transparent conductive oxide layer has a thickness in a range of 10 nm to 500 nm.
4. The light-emitting device of claim 1 , wherein the reflective electrode is provided under the first conductive semiconductor layer.
5. The light-emitting device of claim 1 , further including a metal layer provided under the first conductive semiconductor layer and around the reflective electrode.
6. The light-emitting device of claim 5 , wherein the metal layer makes contact with a bottom surface of the first conductive semiconductor layer.
7. The light-emitting device of claim 5 , wherein the metal layer has a first region making contact with a bottom surface of the first conductive semiconductor layer and a second region extending outward from the first region.
8. The light-emitting device of claim 5 , further including a bonding layer and a support member under the metal layer.
9. The light-emitting device of claim 1 , further including an ohmic contact layer between the first conductive semiconductor layer and the reflective electrode.
10. The light-emitting device of claim 9 , wherein a lateral width of the ohmic contact layer is less than that of the active layer.
11. The light-emitting device of claim 9 , wherein a lateral width of the ohmic contact layer is greater than that of the reflective electrode.
12. A light-emitting device package comprising:
a body;
the light-emitting device according to claim 1 on the body; and
first and second lead electrodes electrically connected to the light-emitting device.
13. A light unit comprising:
a substrate;
the light-emitting device according to claim 1 on the substrate; and
an optical member serving as an optical path for light emitted from the light-emitting device.
14. The light-emitting device of claim 1 , wherein a lateral width of the reflective electrode is less than that of the active layer.
15. The light-emitting device of claim 1 , wherein the active layer includes only at least one quantum well and at least one quantum barrier layer.
16. A light-emitting device comprising:
a transparent conductive oxide layer;
an active layer making direct contact with a bottom surface of the transparent conductive oxide layer;
a first conductive semiconductor layer making contact with a bottom surface of the active layer;
an ohmic reflective electrode electrically connected to the first conductive semiconductor layer; and
a first electrode electrically connected to the transparent conductive oxide layer, wherein a first barrier layer that constitutes the active layer includes a nitride semiconductor including In or Al, and wherein the first barrier layer makes direct contact with the bottom surface of the transparent conductive oxide layer.
17. The light-emitting device of claim 16 , wherein the reflective electrode is provided under the first conductive semiconductor layer.
18. The light-emitting device of claim 16 , wherein a lateral width of the reflective electrode is less than that of the active layer.
19. The light-emitting device of claim 16 , wherein the active layer includes only at least one quantum well and at least one quantum barrier layer.