Nitride semiconductor light emitting element and method for manufacturing same

1. A nitride semiconductor light emitting element comprising:

a substrate;

a buffer layer that is provided on the substrate;

a foundation layer that is provided on the buffer layer;

an n-type nitride semiconductor layer that is provided on the foundation layer;

a light emitting layer that is provided on the n-type nitride semiconductor layer; and

a p-type nitride semiconductor layer that is provided on the light emitting layer,

wherein an X ray rocking curve half-value width ω (004) of a (004) plane that is a crystal plane of each of the layers of the nitride semiconductor light emitting element is 40 arc sec or less or an X ray rocking curve half-value width ω (102) of a (102) plane is 130 arc sec or less, and

a ratio P (80)/P (25) between a light output P (25) at 25° C. and a light output P (80) at 80° C. with a same operating current is 95% or more.

2. The nitride semiconductor light emitting element according to claim 1 ,

wherein the nitride semiconductor light emitting element is driven in a high-current region where a current density is 20 A/cm 2 or more.

3. The nitride semiconductor light emitting element according to claim 1 ,

wherein the buffer layer is formed of AlN or AlON.

4. The nitride semiconductor light emitting element according to claim 1 ,

wherein the substrate includes a plurality of concave portions and a plurality of convex portions arranged between the adjacent concave portions in a surface on which the buffer layer is provided, and

the foundation layer provided on the buffer layer includes: a first foundation layer that is formed on the concave portions of the substrate and that includes a diagonal facet plane; and a second foundation layer that is formed so as to cover the first foundation layer and the convex portions of the substrate.

5. The nitride semiconductor light emitting element according to claim 1 ,

wherein the light emitting layer is formed with a multiple quantum well where a well layer and a barrier layer are alternatively deposited, and includes four or more undoped barrier layers or lightly doped barrier layers which are doped with an n-type dopant and in which a dopant concentration is 2×10 17 cm −3 or less.

6. The nitride semiconductor light emitting element according to claim 5 ,

wherein the barrier layer has a thickness equal to or more than 3 nm but equal to or less than 7 nm.

7. The nitride semiconductor light emitting element according to claim 1 ,

wherein the n-type nitride semiconductor layer includes an intermediate layer below the light emitting layer and includes a multilayer structure member below the intermediate layer,

the intermediate layer is formed by depositing a plurality of nitride semiconductor layers and is formed by alternately depositing a nitride semiconductor layer whose band gap energy is relatively lower than a band gap energy of an adjacent nitride semiconductor layer and a nitride semiconductor layer having a relatively higher band gap energy and

the multilayer structure member is formed by depositing a plurality of nitride semiconductor layers, and is formed by alternately depositing a nitride semiconductor layer which has a thickness more than a thickness of each of the layers of the intermediate layer and whose band gap energy is relatively lower than a band gap energy of an adjacent nitride semiconductor layer and a nitride semiconductor layer which has a thickness more than the thickness of each of the layers of the intermediate layer and whose band gap energy is relatively higher than a band gap energy of an adjacent nitride semiconductor layer.

8. The nitride semiconductor light emitting element according to claim 1 ,

wherein the n-type nitride semiconductor layer includes a lower n-type nitride semiconductor layer and an n-type nitride semiconductor modulation doped layer formed on the lower n-type nitride semiconductor layer, and

the n-type nitride semiconductor modulation doped layer includes at least a nitride semiconductor layer whose n-type dopant concentration is lower than an n-type dopant concentration of the lower n-type nitride semiconductor layer.

9. The nitride semiconductor light emitting element according to claim 1 ,

wherein the n-type nitride semiconductor layer includes the lower n-type nitride semiconductor layer and a low-temperature n-type nitride semiconductor layer that is provided on the lower n-type nitride semiconductor layer and that is grown at a temperature which is 50° C. to 400° C. lower than the lower n-type nitride semiconductor layer, and

an n-type dopant concentration of the low-temperature n-type nitride semiconductor layer is 1.1 times as high as an n-type dopant concentration of the n-type nitride semiconductor layer.

10. The nitride semiconductor light emitting element according to claim 7 ,

wherein

the intermediate layer is a superlattice layer that is formed by depositing a plurality of nitride semiconductor layers and that is formed by alternately depositing a nitride semiconductor layer whose band gap energy is relatively lower than a band gap energy of an adjacent nitride semiconductor layer and a nitride semiconductor layer having a relatively higher band gap energy and

in the intermediate layer, at least two nitride semiconductor layers located on a side of the light emitting layer are formed with an n-type semiconductor layer, and an nitride semiconductor layer located on a side of the substrate as compared with the n-type semiconductor layer is formed with an undoped layer.