Method for producing indium oxide-containing layers

1. A liquid phase process for producing an indium oxide-containing layer, comprising:

applying to a substrate, a composition comprising

i) an indium oxo alkoxide of the generic formula

M x O y (OR) z [O(R′O) e H] a X b Y c [R″OH] d

 where

x=3-25,

y=1-10,

z=3-50,

a=0-25,

b=0-20,

c=1-20,

d=0-25,

e=0, 1,

M=In,

R, R′, R″ are each an organic radical,

X=F, Cl, Br, I,

Y=—NO 3 , —NO 2 ,

 with the proviso that b+c=1-20, and

ii) solvent; and

converting the coated substrate to an indium oxide-containing layer.

2. The process according to claim 1 ,

wherein:

the indium oxo alkoxide is of the formula M x O y (OR) z Y c ,

where x=3-20, y=1-8, z=3-25, c=1-20, OR is a C1-C15-alkoxy, -oxyalkylalkoxy, -aryloxy or -oxyarylalkoxy group and Y is —NO 3 .

3. The process according to claim 1 ,

wherein

the indium oxo alkoxide is the sole metal oxide precursor in the process.

4. The process according to claim 1 ,

wherein

the indium oxo alkoxide is present in a proportion of 0.1 to 15% by weight, based on the total mass of the composition.

5. The process according to claim 1 ,

wherein

the solvent is an aprotic or weakly protic solvent.

6. The process according to claim 5 ,

wherein

the solvent is selected from the group consisting of methanol, ethanol, isopropanol, tetrahydrofurfuryl alcohol, 1-methoxy-2-propanol, tert-butanol and toluene.

7. The process according to claim 1 ,

wherein

the composition has a viscosity of 1 mPa·s to 10 Pa·s.

8. The process according to claim 1 ,

wherein

the substrate comprises glass, silicon, silicon dioxide, a metal oxide, a transition metal oxide, a metal or a polymeric material.

9. The process according to claim 1 ,

wherein

the composition is an aqueous composition that is applied to the substrate by a process selected from the group consisting of a coating process, a printing process, a spraying process, a rotary coating process, a dipping process, meniscus coating, slit coating, slot-die coating and curtain coating.

10. The process according to claim 1 ,

wherein

the converting is effected thermally at a temperature greater than 150° C.

11. The process according to claim 10 ,

wherein

UV, IR or VIS radiation is injected before, during or after the converting is effected thermally.

12. An indium oxo alkoxide of the generic formula M x O y (OR) z [O(R′O) e H] a X b Y c [R″OH] d

where

x=3-25,

y=1-10,

z=3-50,

a=0-25,

b=0-20,

c=1-20,

d=0-25,

e=0, 1,

M=In,

R, R′, R″ are each an organic radical,

X=F, Cl, Br, I,

Y=—NO 3 , —NO 2 ,

with the proviso that b+c=1-20.

13. A coating composition comprising indium oxo alkoxide according to claim 12 and one solvent.

14. An indium oxide-containing layer produced by the process according to claim 1 .

15. An electronic component comprising the indium oxide-containing layer according to claim 14 .

16. The electronic component according to claim 15 , wherein the electronic component is selected from the group consisting of a transistor, a diode, a sensor and a solar cell.

17. The process according to claim 1 , further comprising drying the coated substrate before converting the coated substrate to an indium oxide-containing layer.

18. The process according to claim 1 ,

wherein:

the indium oxo alkoxide is of the formula M x O y (OR) z Y c ,

where x=3-15, y=1-5, z=10-20, c=4-10, R is —CH 3 , —CH 2 CH 3 , —CH 2 CH 2 OCH 3 , —CH(CH 3 ) 2 , —CH(CH 3 )CH 2 OCH 3 , —C(CH 3 ) 3 or

and Y=NO 3 .