Optoelectronics semiconductor component
View Patent ↗An optoelectronic semiconductor component having a light source, which emits primary radiation, a housing, and electrical terminals, wherein a conversion element, which is based on a matrix and at least two phosphors, is connected upstream of the optoelectronic semiconductor component. The matrix contains metal phosphate and preferably consists of metal phosphate. The phosphors partially or completely convert primary radiation. At least one first phosphor powder is embedded and fixed in a first inorganic matrix based on a metal phosphate, and at least one second phosphor powder is embedded and fixed in a second matrix based on a metal phosphate.
1. An optoelectronic semiconductor component having a light source, which emits primary radiation, a housing, and electrical terminals, wherein a conversion element, which comprises at least two phosphor powders, is connected upstream of the optoelectronic semiconductor component, wherein the phosphor powders partially or completely convert primary radiation, and wherein at least one first phosphor powder of said at least two powders is embedded and fixed in a first inorganic matrix comprising a first metal phosphate, and at least one second phosphor powder of said at least two powders is embedded and fixed in a second matrix comprising a second metal phosphate.
2. The optoelectronic semiconductor component as claimed in claim 1 , wherein the first matrix and the second matrix are layers, and wherein the second matrix layer is arranged above or adjacent to the first matrix layer.
3. The optoelectronic semiconductor component as claimed in claim 2 , wherein the first matrix layer to which he first phosphor powder is applied and further matrix layers to which phosphor powders are applied follow one another directly without mixing, wherein these matrix layers are either bonded to the semiconductor component or are spaced apart therefrom.
4. The optoelectronic semiconductor component as claimed in claim 1 , wherein each of the first and second metal phosphates is essentially alkali-free and halogen-free.
5. The optoelectronic semiconductor component as claimed in claim 4 , wherein each of the first and second metal phosphates contains at most 1 mol-% alkali oxides and halogenated components.
6. The optoelectronic semiconductor component as claimed in claim 4 , wherein each of the first and second metal phosphates contains 5 to 90 mol-% P 2 O 5 .
7. The optoelectronic semiconductor component as claimed in claim 4 , wherein each of the first and second metal phosphates contains 50 to 90 mol-% P 2 O 5 .
8. The optoelectronic semiconductor component as claimed in claim 4 , wherein the matrix of at least one layer is produced from a different metal phosphate than the other conversion layers.
9. The optoelectronic semiconductor component as claimed in claim 8 , wherein the metal phosphate matrices are adapted to the respective embedded phosphor powders.
10. The optoelectronic semiconductor component as claimed in claim 4 , wherein each of the first and second metal phosphates contains 10 to 90 mol-% Al 2 O 3 .
11. The optoelectronic semiconductor component as claimed in claim 4 , wherein each of the first and second metal phosphates contains 10 to 50 mol-% Al 2 O 3 .
12. The optoelectronic semiconductor component as claimed in claim 1 , wherein each of the first and second metal phosphates is essentially transparent in the visible spectral range.
13. The optoelectronic semiconductor component as claimed in claim 1 , wherein each of the first and second metal phosphates contains phosphate as a main component.
14. The optoelectronic semiconductor component as claimed in claim 13 , wherein each of the first and second metal phosphates is or predominantly contains aluminum phosphate.
15. The optoelectronic semiconductor component as claimed in claim 14 , wherein each of the first and second metal phosphates contains more than 50 wt.-% aluminum phosphate.
16. The optoelectronic semiconductor component as claimed in claim 1 , wherein inorganic components are added to each of the first and second metal phosphates, which increase the index of refraction and/or are used as fillers and/or act as optical filters and/or scatter and/or increase the heat dissipation and/or adapt the thermal expansion behavior to the substrate.
17. The optoelectronic semiconductor component as claimed in claim 1 , wherein at least one of the first and second metal phosphates has, in combination with the associated phosphor powder, a curing temperature of at most 400° C.
18. The optoelectronic semiconductor component as claimed in claim 17 , wherein at least one of the first and second metal phosphates has, in combination with the associated phosphor powder, a curing temperature of at most 300° C.
19. The optoelectronic semiconductor component as claimed in claim 17 , wherein at least one of the first and second metal phosphates has, in combination with the associated phosphor powder, a curing temperature of at most 220° C.
20. The optoelectronic semiconductor component as claimed in claim 1 , wherein at least one of the first and second metal phosphates has a pH value of 1 to 7 as a solution.