HIGH FREQUENCY RESONATOR MODULATOR APPARATUS, METHOD AND APPLICATIONS
A ring resonator modulator and a modulation method that uses the ring resonator modulator each are predicated upon a modulation frequency of a ring shaped waveguide comparable to a free spectral range of the ring shaped waveguide. Fulfillment of this condition provides for a comparatively higher frequency optical modulation at a comparatively lower power consumption. A particular ring resonator modulator structure employs as an actuator a p-n diode that includes from about 25 to about 50 percent of the ring shaped waveguide and having a depletion region that is contained within the ring shaped waveguide.
1 . An optical component comprising a ring shaped waveguide located over a substrate and characterized by a modulation frequency comparable to a free spectral range of the ring shaped waveguide.
2 . The optical component of claim 1 wherein the optical component comprises a ring resonator modulator.
3 . The optical component of claim 1 wherein the ring shaped waveguide comprises a material selected from the group consisting of dielectric materials, semiconductor materials and conductor materials.
4 . The optical structure of claim 1 wherein the ring shaped waveguide comprises a semiconductor material.
5 . The optical component of claim 4 wherein the ring shaped waveguide comprises a silicon semiconductor material.
6 . The optical component of claim 1 further comprising an actuator component.
7 . The optical component of claim 6 wherein the actuator component comprises a p-n diode integral to the ring shaped waveguide.
8 . The optical component of claim 7 wherein the p-n diode comprises a single p-n diode that includes from 25 to 50 percent of the ring shaped waveguide.
9 . The optical component of claim 7 wherein a depletion region of the p-n diode is located contained within the ring shaped waveguide.
10 . The optical component of claim 7 wherein the p-n diode includes:
a p dopant at a concentration from about 1e17 to 1e20 ions per cubic centimeter; and
an n dopant at a concentration from about 1e17 to about 1e20 ions per cubic centimeter.
11 . The optical component of claim 1 further comprising a bus waveguide coupled to the ring shaped waveguide, the bus waveguide having an input end and an output end.
12 . An optical component comprising:
a ring shaped waveguide located over a substrate;
an actuator comprising a p-n diode located within from 25 to 50 percent of the ring shaped waveguide, the p-n diode having a depletion region contained within the ring shaped waveguide.
13 . The optical component of claim 12 wherein the ring shaped waveguide is characterized by a modulation frequency comparable to a free spectral range of the ring shaped waveguide.
14 . The optical component of claim 12 wherein the p-n diode includes:
a p dopant at a concentration from about 1e17 to about 1e19 ions per cubic centimeter; and
an n dopant at a concentration from about 1e17 to about 1e19 ions per cubic centimeter.
15 . The optical component of claim 12 further comprising a bus waveguide coupled to the ring shaped waveguide, the bus waveguide having an input end and an output end.
16 . A modulation method comprising:
providing a ring resonator modulator comprising:
a ring shaped waveguide located over a substrate and characterized by a modulation frequency comparable to a free spectral range of the ring shaped waveguide; and
a bus waveguide coupled to the ring shaped waveguide, the bus waveguide having an optical input end and an optical output end;
supplying an optical signal at the optical input end of the bus waveguide while actuating the actuator to provide a modulated optical signal at the optical output end of the bus waveguide.
17 . The method of claim 16 wherein the actuator comprises a single actuator.
18 . The method of claim 16 wherein the single actuator comprises a single p-n diode that includes from 25 to 50 percent of the ring shaped waveguide.
19 . The method of claim 16 wherein a depletion region of the p-n diode is contained within the ring shaped waveguide.
20 . The method of claim 16 wherein the actuating the actuator is undertaken at a frequency greater from 20 to 300 GHz.