Granted Patent B2

US 9,431,468 · App. 14/408,633 · Granted Aug 30, 2016

Abstract

Claims (56)

1. A thin-film semiconductor device, comprising:

a substrate;

a film containing aluminum oxide;

an oxide semiconductor layer between the substrate and the film containing aluminum oxide;

a film containing silicon oxide between the oxide semiconductor layer and the film containing aluminum oxide; and

a film containing silicon nitride opposite to the oxide semiconductor layer with the film containing silicon oxide and the film containing aluminum oxide interposed between the oxide semiconductor layer and the film containing silicon nitride, wherein

each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride includes at least one through-hole in which an extraction electrode is embedded, the extraction electrode being electrically connected with the oxide semiconductor layer,

when the substrate is viewed in a plan view, the through-hole included in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride overlap, and

the film containing aluminum oxide has a film density of 2.80 g/cm 3 to 3.25 g/cm 3 .

2. The thin-film semiconductor device of claim 1 , wherein

the film containing aluminum oxide has the film density of 2.85 g/cm 3 to 2.95 g/cm 3 .

3. The thin-film semiconductor device of claim 1 , wherein

a composition ratio x of oxygen to aluminum in the film containing aluminum oxide satisfies 1.5<x<2.0.

4. The thin-film semiconductor device of claim 3 , wherein

the composition ratio x satisfies 1.79≦x≦1.85.

5. The thin-film semiconductor device of claim 1 , wherein

aluminum oxide contained in the film containing aluminum oxide has an amorphous structure.

6. The thin-film semiconductor device of claim 1 , wherein

the film containing aluminum oxide has a refractive index of 1.58 to 1.66.

7. The thin-film semiconductor device of claim 1 , wherein

the film containing aluminum oxide has a film thickness of 3 nm to 30 nm.

8. The thin-film semiconductor device of claim 1 , wherein

the film containing aluminum oxide has a single-layer structure.

9. An organic EL display device, comprising:

the thin-film semiconductor device of claim 1 ; and

above the film containing aluminum oxide of the thin-film semiconductor device of claim 1 , an organic EL element that includes:

a lower electrode that is electrically connected with the extraction electrode;

a light-emitting layer containing an organic light-emitting material; and

an upper electrode.

10. The thin-film semiconductor device of claim 1 , wherein

the film containing aluminum oxide has a film thickness of 3 nm to 50 nm,

the film containing silicon oxide has a film thickness of 50 nm to 500 nm, and

the film containing silicon nitride has a film thickness of 50 nm to 700 nm.

11. The thin-film semiconductor device of claim 1 , wherein

a total thickness of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride is 300 nm to 700 nm.

12. A manufacturing method of a thin-film semiconductor device, the manufacturing method comprising:

preparing a substrate;

forming an oxide semiconductor layer above the substrate;

forming a film containing silicon oxide above the oxide semiconductor layer;

forming a film containing aluminum oxide above the film containing silicon oxide, the film containing silicon oxide being between the oxide semiconductor layer and the film containing aluminum oxide;

forming a film containing silicon nitride above the film containing aluminum oxide, the film containing silicon nitride being opposite to the oxide semiconductor layer with the film containing silicon oxide and the film containing aluminum oxide interposed between the oxide semiconductor layer and the film containing silicon nitride;

providing at least one through-hole in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride; and

embedding, in the through-hole provided in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride, an extraction electrode that is to be electrically connected with the oxide semiconductor layer, wherein

when the substrate is viewed in a plan view, the through-hole provided in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride overlap, and

the film containing aluminum oxide has a film density of 2.80 g/cm 3 to 3.25 g/cm 3 .

13. A manufacturing method of an organic EL display device, the manufacturing method comprising:

preparing a substrate;

forming an oxide semiconductor layer above the substrate;

forming a film containing silicon oxide above the oxide semiconductor layer;

forming a film containing aluminum oxide above the film containing silicon oxide, the film containing silicon oxide being between the oxide semiconductor layer and the film containing aluminum oxide;

forming a film containing silicon nitride above the film containing aluminum oxide, the film containing silicon nitride being opposite to the oxide semiconductor layer with the film containing silicon oxide and the film containing aluminum oxide interposed between the oxide semiconductor layer and the film containing silicon nitride;

providing at least one through-hole in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride;

embedding, in the through-hole provided in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride, an extraction electrode that is to be electrically connected with the oxide semiconductor layer; and

forming an organic EL element above the film containing silicon nitride, the organic EL element including a lower electrode that is to be electrically connected with the extraction electrode, a light-emitting layer containing an organic light-emitting material, and an upper electrode, wherein

when the substrate is viewed in a plan view, the through-hole provided in each of the film containing aluminum oxide, the film containing silicon oxide, and the film containing silicon nitride overlap, and

the film containing aluminum oxide has a film density of 2.80 g/cm 3 to 3.25 g/cm 3 .

Assignments (6)