II-VI based light emitting semiconductor device
View Patent ↗The invention provides a light emitting semi conductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x≦0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.
1. A light emitting semiconductor device comprising:
a stack, the stack comprising:
a cathode,
a semiconductor layer comprising an emissive material having an emission in the range of 300-900 nm,
an insulating layer, and
an anode,
wherein the cathode is in electrical contact with the semiconductor layer,
wherein the anode is in electrical contact with the insulating layer,
wherein the insulating layer has a thickness in the range of up to 50 nm,
wherein the semiconductor layer comprises aluminum doped zinc magnesium oxide layer having 1-350 ppm Al.
2. The light emitting semiconductor device according to claim 1 , wherein the emissive material has a conduction band at CBp eV and a valence band at VBp eV from the vacuum level, with CBp>VBp,
wherein the insulating layer has a conduction band at CBb eV and a valence band at VBb eV from the vacuum level, with CBb>VBb,
wherein CBb>CBp and wherein VBb≦VBp+1.5 eV.
3. The light emitting semiconductor device according to claim 1 , wherein the semiconductor layer comprises an emissive material selected from the group consisting of ZnO, (Zn,Mg)O, ZnS, ZnSe, CdO, CdS, CdSe, and doped variants of any of these.
4. The light emitting semiconductor device according to claim 1 , wherein the semiconductor layer has a nominal composition Zn 1-x Mg x O with 1-350 ppm Al, wherein x is in the range of 0<x≦0.3.
5. The light emitting semiconductor device according to claim 1 , wherein the insulating layer is an oxidic insulating layer selected from the group consisting of SiO 2 , MgO, SrTiO 3 , ZrO 2 , HfO 2 , and Y 2 O 3 .
6. The light emitting semiconductor device according to claim 1 , wherein the insulating layer has a thickness in the range of 2-30 nm.
7. The light emitting semiconductor device according to claim 1 , wherein the semiconductor layer has a nominal composition Zn 1-x Mg x O with 1-350 ppm Al, wherein x is in the range of 0.02<x≦0.2.