METHOD OF PURIFYING SILICON

1 . A method comprising:

(a) forming a first molten liquid from a solvent metal and at least one of sodium, sodium carbonate, and sodium oxide;

(b) contacting the first molten liquid with silicon to form a second molten liquid;

(c) cooling the second molten liquid to provide silicon crystals and a mother liquor; and

(d) separating the silicon crystals from the mother liquor.

2 . (canceled)

3 . The method of claim 1 , wherein the silicon crystals are at least partially purified from phosphorous.

4 . The method of claim 1 , wherein the silicon that contacts the first molten liquid is metallurgical grade silicon.

5 . The method of claim 1 , wherein the silicon that contacts the first molten liquid has a phosphorous level up to about 60 ppmw.

6 . The method of claim 1 , wherein the silicon that contacts the first molten liquid has a boron level up to about 15 ppmw.

7 . The method of claim 1 , wherein the silicon crystals separated from the mother liquor comprises less than about 4 ppmw phosphorous.

8 . The method of claim 1 , wherein the silicon crystals separated from the mother liquor comprises less than about 3 ppmw phosphorous.

9 . The method of claim 1 , wherein the solvent metal comprises at least one of copper, tin, zinc, antimony, silver, bismuth, aluminum, cadmium, gallium, indium, magnesium, lead, and an alloy thereof.

10 . (canceled)

11 . The method of claim 1 , wherein the solvent metal comprises aluminum, and is employed in the first molten liquid in an amount of about 99.70 wt. %.

12 . The method of claim 1 , wherein the at least one of sodium, sodium carbonate, and sodium oxide is employed in the first molten liquid in an amount of about 0.30 wt. %.

13 . The method of claim 1 , wherein the first molten liquid is contacted with silicon in a weight ratio of about 1200:1000 of silicon to first molten liquid.

14 . The method of claim 1 , wherein the cooling of the second molten liquid to provide the silicon crystals and the mother liquor is carried out to a temperature above the solidus temperature or at a temperature between the solidus and the liquidus temperature.

15 - 16 . (canceled)

17 . The method of claim 1 , wherein the silicon crystals separated from the mother liquor comprise less than about 1,500 ppmw aluminum.

18 . (canceled)

19 . The method of claim 1 , wherein any one or more of steps (a)-(d) is repeated one or more times.

20 . The method of claim 1 , wherein each of steps (a)-(d) is independently repeated one or more times.

21 . (canceled)

22 . The method of claim 1 , wherein the mother liquor comprises at least about 1,000 ppmw aluminum.

23 . (canceled)

24 . The method of claim 1 , wherein sodium oxide is formed in situ, from sodium carbonate.

25 . The method of claim 1 , wherein sodium carbonate is formed in situ.

26 . (canceled)

27 . The method of claim 1 , wherein the at least one of the sodium, the sodium carbonate, and the sodium oxide evolves or releases carbon dioxide (CO 2 ) from the first molten liquid.

28 . A method for purifying metallurgical grade silicon with a phosphorous level up to about 60 ppmw and a boron level up to about 15 ppmw, the method comprising:

(a) forming a first molten liquid from a solvent metal and sodium carbonate, wherein the solvent metal comprises aluminum;

(b) contacting the first molten liquid with silicon to form a second molten liquid;

(c) cooling the second molten liquid to provide silicon crystals and a mother liquor; and

(d) separating the silicon crystals from the mother liquor;

wherein the silicon crystals separated from the mother liquor comprises less than about 4 ppmw phosphorous;

wherein the silicon crystals separated from the mother liquor comprise less than about 3,000 ppmw aluminum; and

wherein the mother liquor separated from the silicon crystals comprise at least about 1,000 ppmw aluminum.

29 - 30 . (canceled)