Method for producing a polycrystalline ceramic film
The invention relates to a method for producing a polycrystalline ceramic film on a surface ( 12 ) of a substrate ( 10 ), in which a particle stream is directed onto the surface ( 12 ) and the ceramic film is formed by deposition of the particles onto the surface ( 12 ), wherein the particle stream is directed by means of a diaphragm onto the surface ( 12 ) along a preferred direction until a first specified layer thickness is reached, the preferred direction and a surface normal of the surface ( 12 ) enclosing a specified angle of incidence. According to the invention, the diaphragm is removed from the particle stream after the specified layer thickness has been reached, and additional particles are directed onto the surface ( 12 ) until a specified second layer thickness has been reached.
1. A method for producing a polycrystalline ceramic film on a surface of a substrate, the method comprising:
directing a particle stream onto the surface, the polycrystalline ceramic film being formed by deposition of particles on the surface,
wherein the directing comprises:
forming a first layer, the forming of the first layer comprising directing, until a first specified layer thickness is reached, the particle stream by a diaphragm in a direction onto the surface, making a specified angle of incidence with a normal to the surface, the specified angle of incidence with the normal to the surface being a non-zero angle with a maximum of 90°; and
after attainment of the first specified layer thickness with a desired crystalline axis orientation, directing further particles of the same particle stream of particles onto the surface with the diaphragm removed from the particle stream until a second specified layer thickness with the desired crystalline axis orientation of the first layer is reached, and
wherein directing the further particles of the same particle stream of particles onto the surface comprises growing crystals from the first layer with the desired crystalline axis orientation of the first layer.
2. The method of claim 1 , wherein the first specified layer thickness is 50 to 150 nm.
3. The method of claim 1 , wherein the second specified layer thickness is 450 to 600 nm.
4. The method of claim 1 , wherein particles of ZnO, particles of AlN, or a combination thereof is used as particles of the particle stream.
5. The method of claim 1 , wherein the particle stream is provided by sputtering.
6. The method of claim 1 , wherein the specified angle of incidence is selected from the range from 10 to 30°.
7. The method of claim 3 , wherein the first specified layer thickness is 100 nm.
8. The method of claim 3 , wherein the second specified layer thickness is 540 nm.
9. The method of claim 1 , wherein the substrate is made of silicon.
10. A method for producing a thin-film bulk acoustic resonator, the method comprising:
directing a particle stream onto a surface of a substrate, a polycrystalline ceramic film being formed by deposition of particles on the surface,
wherein the directing comprises:
forming a first layer, the forming of the first layer comprising directing, by a diaphragm, the particle stream in a direction onto the surface until a first specified layer thickness is reached, the direction on to the surface making a specified angle of incidence with a normal to the surface, the specified angle of incidence with the normal to the surface being a non-zero angle with a maximum of 90°; and
after attainment of the first specified layer thickness with a desired crystalline axis orientation, directing further particles of the same particle stream of particles onto the surface with the diaphragm removed from the particle stream until a second specified layer thickness with the desired crystalline axis orientation of the first layer is reached, and
wherein directing the further particles of the same particle stream of particles onto the surface comprises growing crystals from the first layer with the desired crystalline axis orientation of the first layer.
11. The method of claim 10 , wherein the substrate is made of silicon.