Method of encapsulating an optoelectronic device and light-emitting diode chip

1. A method of encapsulating an optoelectronic device comprising:

providing a surface intended to be encapsulated, said surface containing platinum;

generating reactive oxygen groups and/or reactive hydroxyl groups on said surface containing platinum, wherein the reactive oxygen groups and/or the reactive hydroxyl groups on said surface containing platinum are generated by one of treatment with oxygen containing plasma or treatment with ozone;

depositing a passivation layer by atomic layer deposition on said surface containing platinum; and

depositing a further dielectric layer on the passivation layer.

2. The method of claim 1 , wherein the passivation layer comprises a metal oxide or a semiconductor oxide.

3. The method of claim 1 , wherein the passivation layer comprises one of aluminium oxide or silicon oxide.

4. The method of claim 1 , wherein the thickness of the passivation layer is 15 nm to 50 nm.

5. The method of claim 1 , wherein the further dielectric layer is deposited by one of atomic layer deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, physical vapor deposition or sputtering.

6. The method of claim 1 , wherein the passivation layer functions as an adhesion enhancing layer with respect to the further dielectric layer.

7. The method of claim 1 , wherein the further dielectric layer has a passivating, isolating and/or optical function.

8. The method of claim 1 , wherein the further dielectric layer comprises one of silicon oxide or silicon nitride.

9. The method of claim 1 , wherein the surface intended to be encapulated is part of a light-emitting diode chip.

10. A light-emitting diode chip manufactured by the method of claim 1 .

11. The light-emitting diode chip of claim 10 , which is a thin film light-emitting diode chip.

12. A method of encapsulating an optoelectronic device comprising:

providing a surface intended to be encapsulated, wherein said surface is partly formed by platinum, another part of the surface is formed by gallium nitride, gallium phosphide or gallium arsenide, and a further part of the surface is formed by silicon oxide,

generating reactive oxygen groups and/or reactive hydroxyl groups on said surface; and

depositing a passivation layer by atomic layer deposition on said surface,

wherein the reactive oxygen groups and/or the reactive hydroxyl groups on said surface are generated by treatment with oxygen containing plasma or treatment with ozone.

13. A method of encapsulating an optoelectronic device comprising:

providing a thin film semiconductor chip with an epitaxially grown multilayer stack arranged on a carrier, wherein a reflective layer is arranged between the multilayer stack and the carrier, said reflective layer having a surface comprising platinum and the reflective layer projects laterally from the multilayer stack,

generating reactive oxygen groups and/or reactive hydroxyl groups on side faces of the multilayer stack, on the top face of the multilayer stack and on parts of the surface of the reflective layer projecting laterally from the multilayer stack, and

depositing a passivation layer with help of atomic layer deposition on the side faces of the multilayer stack, on the front face of the multilayer stack and on the parts of the surface of the reflective layer projecting laterally from the multilayer stack.