Thermoelectric materials based on tetrahedrite structure for thermoelectric devices
View Patent ↗Thermoelectric materials based on tetrahedrite structures for thermoelectric devices and methods for producing thermoelectric materials and devices are disclosed.
1. A thermoelectric device comprising:
a pair of conductors; and
a layer of tetrahedrite disposed between the pair of conductors, wherein the layer of tetrahedrite comprises Cu 12-x M x Sb 4 S 13 ; with M being selected from the group consisting of Zn at a concentration 0<x<2.0, Fe at a concentration between 0<x<1.5, and combinations thereof.
2. A thermoelectric device comprising:
a pair of conductors; and
a layer of tetrahedrite disposed between the pair of conductors, wherein
the layer of tetrahedrite comprises one of Cu, M, Sb, and S where M is a transition metal with appropriate brillouin zone occupation factor of less than 0.8, wherein the layer of tetrahedrite comprises Cu 12-x M x Sb 4 S 13 ; with M being selected from the group of Zn at a concentration 0<x<2.0, Fe at a concentration between 0<x<1.5, and combinations thereof.
3. A thermoelectric device comprising:
a pair of conductors; and
a layer of tetrahedrite disposed between the pair of conductors, wherein the layer of tetrahedrite comprises one of Cu, M, Sb, and S where M is a transition metal with appropriate brillouin zone occupation factor of less than 0.8, wherein the tetrahedrite is a sintered powder having a density of greater than about 95%.
4. A thermoelectric device comprising:
a pair of conductors; and
Cu 12-x M x Sb 4 S 13 disposed between the conductors where M is selected from the group Zn, Fe, and Mn and wherein 0<x<2.0, wherein Mx is Zn 2-x and x<2.
5. A thermoelectric device comprising:
a pair of conductors; and
Cu 12-x M x Sb 4 S 13 disposed between the conductors, where M is selected from the group Zn, Fe, and Mn and wherein 0<x<2.0, wherein Mx is Fe 2-x and x<2.
6. A thermoelectric device comprising:
a pair of conductors; and
Cu 12-x M x Sb 4 S 13 disposed between the conductors, where M is selected from the group Zn, Fe, and Mn and wherein 0<x<2.0, wherein M is one of Zn and Fe.
7. A method of producing a thermoelectric device comprising:
creating tetrahedrite comprising Cu 12-x M x Sb 4 S 13 wherein M is selected from the group of Zn at a concentration 0<x<2.0, Fe at a concentration 0<x<1.5, and combinations thereof;
grinding the tetrahedrite;
hot pressing the ground tetrahedrite to form a pellet; and
placing the pellet between a pair of electrical conductors.
8. The method according to claim 7 wherein creating tetrahedrite comprising Cu 12-x M x Sb 4 S 13 comprises sintering a stoichiometric mixture of Cu, Sb, S and one of Zn and Fe particles.
9. A method of producing a thermoelectric device comprising:
creating tetrahedrite comprising Cu 12-x M x Sb 4 S 13 wherein M is selected from the group of Zn at a concentration 0<x<2.0, Fe at a concentration 0<x<1.5, and combinations thereof;
grinding the tetrahedrite;
hot pressing the ground tetrahedrite to form a pellet; and
placing the pellet between a pair of electrical conductors, wherein hot pressing the ground tetrahedrite to form a pellet is hot pressing the ground tetrahedrite to form a pellet to a density of greater than 95%.