Photothermal conversion film having good visible light penetrability, and transfer film for OLED using same
Disclosed are a photothermal conversion film having good photothermal conversion effects and also good visible light penetrability, and a transfer film for an OLED using same. The photothermal conversion film according to the present invention comprises a base film and a photothermal conversion layer formed on the base film, wherein the photothermal conversion layer includes a tungsten oxide-based material and has visible light penetrability of 20% or greater.
1. A photothermal conversion film comprising:
a base film; and
a photothermal conversion layer formed on the base film,
wherein the photothermal conversion layer comprises a tungsten oxide-based material and has a visible light transmittance of 20% or more, and
wherein the photothermal conversion layer comprises 0.1 parts by weight to 5 parts by weight of a photoinitiator, based on 100 parts by weight of the tungsten oxide-based material.
2. The photothermal conversion film according to claim 1 , wherein the tungsten oxide-based material comprises tungsten oxide powder.
3. The photothermal conversion film according to claim 1 , wherein the tungsten oxide-based material comprises hydrogen or metal-containing tungsten oxide powder (M x W 0 3 , M being hydrogen or metal, 0.1<x<1).
4. The photothermal conversion film according to claim 3 , wherein the metal comprises at least one selected from among Li, Na, K, Rb, Cs, Ca, Ba, Sr, Fe, Sn, Mo, Nb, Ta, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga, In, and Tl.
5. The photothermal conversion film according to claim 1 , wherein the photothermal conversion layer comprises 10 parts by weight to 50 parts by weight of a binder.
6. The photothermal conversion film according to claim 1 , wherein the photothermal conversion layer has a thickness of 1 μm to 5μm.
7. The photothermal conversion film according to claim 1 , further comprising: a protective layer formed on the photothermal conversion layer.
8. The photothermal conversion film according to claim 7 , wherein the protective layer has a thickness of 0.1 μm to 3 μm.
9. A transfer film for OLEDs, comprising:
a base film;
a photothermal conversion layer formed on the base film; and
an organic light emitting material layer formed on the photothermal conversion layer,
wherein the photothermal conversion layer comprises a tungsten oxide-based material and has a visible light transmittance of 20% or more, and
wherein the photothermal conversion layer comprises 0.1 parts by weight to 5 parts by weight of a photoinitiator, based on 100 parts by weight of the tungsten oxide-based material.
10. The transfer film according to claim 9 , wherein the tungsten oxide-based material comprises tungsten oxide powder.
11. The transfer film according to claim 9 , wherein the tungsten oxide-based material comprises hydrogen or metal-containing tungsten oxide powder (M x WO 3 , M being hydrogen or metal, 0.1<x<1).
12. The transfer film according to claim 11 wherein the metal comprises at least one selected from among Li, Na, K, Rb, Cs, Ca, Ba, Sr, Fe, Sn, Mo, Nb, Ta, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga, In, and Tl.
13. The transfer film according to claim 9 , wherein the photothermal conversion layer comprises 10 parts by weight to 50 parts by weight of a binder.
14. The transfer film according to claim 9 , wherein the photothermal conversion layer has a thickness of 1 μm to 5 μm.
15. The transfer film according to claim 9 , further comprising: a protective layer formed on the photothermal conversion layer,
wherein the organic light emitting material layer is formed on the protective layer.
16. The transfer film according to claim 15 , wherein the protective layer has a thickness of 0.1 μm to 3 μm.