LED For Plant Illumination
An LED used for plant illumination, comprising a substrate (11), a PN-junction light-emitting part arranged on the substrate (11). The light-emitting part has a strained light-emitting layer with component formula of GaXIn(1−X)AsYP(1−Y) (0<X<1 and 0<Y<1). The light-emitting part has a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer. The structure adopts a new light-emitting material GaXIn(1−X)AsYP(1−Y), which can significantly improve the light-emitting efficiency by 50%-100%.
1 . An LED used for plant illumination, comprising:
a substrate;
a PN junction light-emitting part is arranged on said substrate;
the light-emitting part has a strained light-emitting layer with component formula of GaXIn(1−X)AsYP(1−Y), 0<X<1 and 0<Y<1.
2 . An LED used for plant illumination according to claim 1 , wherein 0<Y<0.2.
3 . An LED used for plant illumination according to claim 1 , wherein 0<Y<0.1.
4 . An LED used for plant illumination according to claim 1 , wherein 0<Y<0.05.
5 . An LED used for plant illumination according to claim 1 , wherein the light-emitting part has a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer.
6 . An LED used for plant illumination according to claim 5 , wherein each alternating-layer structure is 5-100 nm thick.
7 . An LED used for plant illumination according to claim 1 , wherein the barrier layer has a component formula of (AlXGa1−X)YIn(1−Y)P (0.3≦X≦1 and 0<Y<1).
8 . An LED used for plant illumination according to claim 1 , wherein the LED also comprises a GaP window layer on the light-emitting part.
9 . An LED used for plant illumination according to claim 1 , wherein the peak light-emitting wavelength of the strained light-emitting layer is 650-750 nm.
10 . An LED used for plant illumination according to claim 1 , wherein the peak light-emitting wavelength of the strained light-emitting layer is 700-750 nm.