THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT AND ELECTRONIC APPARATUS
There are provided a thin film transistor having a simple structure that allows reduction in leakage current at the time of gate negative bias, and a method of manufacturing the thin film transistor, and a display unit and an electronic apparatus. The thin film transistor includes: a gate electrode; a semiconductor film including a channel region that faces the gate electrode; and an insulating film provided at least at a position near an end portion on the gate electrode side of side walls of the semiconductor film.
1 . A thin film transistor comprising:
a substrate;
a gate electrode on the substrate;
a semiconductor film facing the gate electrode;
a channel forming region in the semiconductor film;
a pair of source and drain regions on the substrate; and
an insulating film on at least a portion of a side face of the semiconductor film.
2 . The thin film transistor according to claim 1 wherein the insulating film is on the entire side face of the semiconductor film.
3 . The thin film transistor according to claim 1 wherein the insulating film is parallel to the side face of the semiconductor film.
4 . The thin film transistor according to claim 1 further comprising a gate insulating film in-between the semiconductor film and the gate electrode.
5 . The thin film transistor according to claim 4 , wherein the insulating film is located at an interface between the semiconductor film and the gate insulating film.
6 . The thin film transistor according to claim 1 wherein a length, x, of the gate electrode is longer than a length, y, of the semiconductor film.
7 . The thin film transistor according to claim 1 wherein a length, x, of the gate electrode is shorter than a length, y, of the semiconductor film.
8 . The thin film transistor according to claim 1 wherein the semiconductor film has a thickness of 2 nm to 300 nm, inclusive.
9 . The thin film transistor according to claim 1 wherein the insulting film comprises at least one of SiO2, SiN, or SiON.
10 . A display unit comprising:
a pixel driving circuit layer;
a light emitting device layer substrate; and
a thin film transistor in the pixel driving circuit layer, wherein,
the thin film transistor comprises (i) a substrate, (ii) a gate electrode facing the substrate, (iii) a semiconductor film on the gate electrode (iv) a channel forming region in the semiconductor film, (v) a pair of source and drain regions on the substrate, and (vi) an insulating film on at least a portion of the side face of the semiconductor film.
11 . A method of manufacturing a thin film transistor comprising the steps of:
providing a substrate;
forming a gate electrode on the substrate;
forming a semiconductor film facing the gate electrode;
forming an insulating film on at least a portion of a side face of the semiconductor film;
forming a source region; and
forming a drain region.
12 . The thin film transistor according to claim 1 wherein the semiconductor film comprises a polysilicon, an amorphous silicon, or an oxide which contains at least one of In, Ga, Zn, Sn, Al, and Ti as a main component.
13 . The thin film transistor according to claim 1 further comprising a channel protective film is on the semiconductor film.
14 . The thin film transistor according to claim 1 further comprising a channel protective film between the source electrode and the drain electrode, wherein each of the source electrode and the drain electrode partially overlap the protective film.