Optoelectronic component with organic and inorganic charge generating layers and method for producing an optoelectronic component

1. An optoelectronic component, comprising:

a first organic functional layer structure;

a second organic functional layer structure; and

a charge generating layer structure between the first organic functional layer structure and the second organic functional layer structure,

wherein the charge generating layer structure comprises a hole-conducting charge generating layer and a first electron-conducting charge generating layer; and

wherein the hole-conducting charge generating layer comprises or is formed from an inorganic substance or an inorganic substance mixture, and wherein the first electron-conducting charge generating layer comprises or is formed from an organic substance or an organic substance mixture;

wherein the first electron-conducting charge generating layer comprises or is formed from an organic, intrinsically electron-conducting substance, and wherein more than half of freely mobile charge carriers of the first electron-conducting charge generating layer are electrons.

2. The optoelectronic component as claimed in claim 1 , further comprising a second electron-conducting charge generating layer on or above the first electron-conducting charge generating layer.

3. The optoelectronic component as claimed in claim 2 , further comprising:

an interlayer between the first electron-conducting charge generating layer and the second electron-conducting charge generating layer.

4. The optoelectronic component as claimed in claim 1 , wherein the inorganic hole-conducting substance of the hole-conducting charge generating layer comprises or is formed from an inorganic, intrinsically hole-conducting substance.

5. The optoelectronic component as claimed in claim 4 , wherein the inorganic, intrinsically hole-conducting substance of the hole-conducting charge generating layer comprises or is formed from BaCuSF, BaCuSeF and/or BaCuTeF or a stoichiometric variant of said compounds.

6. The optoelectronic component as claimed in claim 4 , wherein the inorganic, intrinsically hole-conducting substance of the hole-conducting charge generating layer comprises or is formed from NiO and/or AgCoO 2 or a stoichiometric variant of said compound.

7. The optoelectronic component as claimed in claim 4 , wherein the inorganic, intrinsically hole-conducting substance of the hole-conducting charge generating layer comprises or is formed from one or a plurality of copper-containing delafossites.

8. The optoelectronic component as claimed in claim 7 , wherein the copper-containing delafossite or the copper-containing delafossites comprises or comprise or is or are formed from one or a plurality of substances of the substance group of CuAlO 2 , CuGaO 2 , CuInO 2 , CuTlO 2 , CuY 1-x Ca x O 2 , CuCr 1-x Mg x O 2 and/or CuO 2 or a stoichiometric variant of said compounds.

9. The optoelectronic component as claimed in claim 4 , wherein the inorganic, intrinsically hole-conducting substance of the hole-conducting charge generating layer comprises or is formed from one or a plurality of substances of the substance group ZnCo 2 O 4 , ZnRh 2 O 4 and/or ZnIr 2 O 4 or a stoichiometric variant of said compounds.

10. The optoelectronic component as claimed in claim 4 , wherein the inorganic, intrinsically hole-conducting substance of the hole-conducting charge generating layer comprises or is formed from SrCu 2 O 2 or a stoichiometric variant of said compound.

11. The optoelectronic component as claimed in claim 4 , wherein the inorganic, intrinsically hole-conducting substance of the hole-conducting charge generating layer comprises or is formed from one or a plurality of substances of the substance group LaCuOS, LaCuOSe and/or LaCuOTe or a stoichiometric variant of said compound.

12. The optoelectronic component as claimed in claim 1 , wherein the first electron-conducting charge generating layer comprises an organic, intrinsically electron-conducting substance from the group of substances: HAT-CN, Cu(I)pFBz, F4-TCNQ, NDP-2, NDP-9, Bi(III)pFBz, F16CuPc or an intrinsically electron-conducting metal oxide substance from the group of: MoO x , WO x , VO x , ReO x .

13. The optoelectronic component as claimed in claim 1 , wherein the optoelectronic component is embodied as an organic light-emitting diode.

14. A method for producing an optoelectronic component, the method comprising:

forming a first organic functional layer structure;

forming a charge generating layer structure above or on the first organic functional layer structure;

forming a second organic functional layer structure above or on the charge generating layer structure;

wherein forming the charge generating layer structure comprises forming a hole-conducting charge generating layer and forming a first electron-conducting charge generating layer; wherein the hole-conducting charge generating layer comprises or is formed from an inorganic substance or an inorganic substance mixture, and wherein the first electron-conducting charge generating layer comprises or is formed from an organic, intrinsically electron-conducting substance or an organic, intrinsically electron-conducting substance mixture, and wherein more than half of freely mobile charge carriers of the first electron-conducting charge generating layer are electrons.

15. The method as claimed in claim 14 ,

wherein the forming the hole-conducting charge generating layer by means of depositing the inorganic hole-conducting substance or the inorganic hole-conducting substance mixture is performed at a temperature of less than approximately 100° C.

16. The method as claimed in claim 14 ,

wherein the optoelectronic component is produced as an organic light emitting diode.