III-V compound semiconductor-based-light-emitting diode device with embedded charge carrier barrier
View Patent ↗An optoelectronic semiconductor body includes a semiconductor layer sequence having an active region that generates radiation, a first barrier region and a second barrier region, wherein the active region is arranged between the first barrier region and the second barrier region; and at least one charge carrier barrier layer is arranged in the first barrier region, said at least one charge carrier barrier layer being tensile-strained.
1. An optoelectronic semiconductor body comprising a semiconductor layer sequence having an active region that generates radiation, a first barrier region and a second barrier region, wherein:
the active region is arranged between the first barrier region and the second barrier region;
at least one charge carrier barrier layer is arranged in the first barrier region, the at least one charge carrier barrier layer being tensile-strained, and
the active region is based on the material system Al x In y Ga 1-x-y P where 0≦x≦1, 0≦y≦1 and x+y≦1 and the charge carrier barrier layer has an Al content x of 0.52≦x≦0.7.
2. The optoelectronic semiconductor body according to claim 1 , wherein a relative lattice mismatch of the charge carrier barrier layer is 0.2% to 1%.
3. The optoelectronic semiconductor body according to claim 1 , wherein the charge carrier barrier layer has a higher Al content than the material adjoining on both sides of the charge carrier barrier layer.
4. The optoelectronic semiconductor body according to claim 1 , wherein the material adjoining the charge carrier barrier layer is free of gallium or has a gallium content of at most 5%.
5. The optoelectronic semiconductor body according to claim 1 , wherein the charge carrier barrier layer has a thickness of 1 nm to 25 nm.
6. The optoelectronic semiconductor body according to claim 1 , wherein the first barrier region has at least one further tensile-strained charge carrier barrier layer.
7. The optoelectronic semiconductor body according to claim 6 , wherein the first charge carrier barrier layer and the further charge carrier barrier layer are at a distance from one another of 3 nm to 200 nm.
8. The optoelectronic semiconductor body according to claim 6 , wherein the first charge carrier barrier layer and the further charge carrier barrier layer are at a distance from one another of 50 nm to 200 nm.
9. The optoelectronic semiconductor body according to claim 6 , wherein the first charge carrier barrier layer and the further charge carrier barrier layer are at a distance from one another of 3 nm to 100 nm.
10. The optoelectronic semiconductor body according to claim 6 , wherein the further charge carrier barrier layer is further away from the active region than the charge carrier barrier layer and has a higher Al content than the charge carrier barrier layer.
11. The optoelectronic semiconductor body according to claim 6 , wherein an intermediate layer is arranged between the charge carrier barrier layer and the further charge carrier barrier layer, said intermediate layer being compressively strained.
12. The optoelectronic semiconductor body according to claim 1 , wherein the active region has a quantum structure having at least one quantum layer and the charge carrier barrier layer is at a distance of 10 nm to 900 nm from that quantum layer of the quantum structure which is situated closest to the charge carrier barrier layer.
13. An optoelectronic semiconductor chip comprising a semiconductor body according to claim 1 , wherein the semiconductor body is arranged on a carrier.
14. The optoelectronic semiconductor chip according to claim 13 , wherein a metallic mirror layer is arranged between the semiconductor body and the carrier.