IP Library Granted Patent US 9,865,401
Granted Patent B2
US 9,865,401 · App. 14/423,173 · Granted Jan 9, 2018

Method for manufacturing solid electrolytic capacitor, and solid electrolytic capacitor

Inventors: Kiyofumi Aoki (Shiga Pref., JP); Hiromasa Ageo (Shiga Pref., JP); Junya Tatsuno (Shiga Pref., JP); Koji Inazawa (Shiga Pref., JP)
Assignee: AVX Corporation
H01G9/15H01G9/0032H01G9/0036H01G9/028H01G9/032
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,865,401
App. No.
14/423,173
Granted
Jan 9, 2018
Kind
B2
Abstract

A method for manufacturing a solid electrolytic capacitor with excellent ESR properties and a solid electrolytic capacitor. A method for manufacturing a solid electrolytic capacitor, wherein an anode body is obtained by forming a dielectric oxide film on the surface of a sintered body that is formed by sintering a molded body formed of a valve acting metal powder or on the surface of a roughened valve acting metal foil, and a solid electrolyte layer is formed on the surface of the anode body. This method for manufacturing a solid electrolytic capacitor is characterized by steps for forming a solid electrolyte layer including a protrusion forming process where protrusions formed of manganese dioxide and having an average diameter of 10˜102 nm are formed on the surface of the dielectric oxide coating film so that the protrusions are scattered about like islands and the surface coverage is 1˜20% and a conductive polymer layer forming process where a conductive polymer layer is formed on the surfaces of the projections and the dielectric oxide coating film.

Claims (21)

1. A solid electrolytic capacitor comprising:

a sintered molded body formed of a valve acting metal powder;

a dielectric oxide film formed on the sintered body;

a solid electrolytic layer formed on the surface of the dielectric oxide film, wherein the solid electrolytic layer comprises protrusions that cover 1 to 20% of the surface of the dielectric film and have an average diameter of 10 to 102 nanometers, wherein the protrusions include manganese dioxide, and wherein the solid electrolytic layer further comprises a conductive polymer layer formed on a surface of the protrusions and the dielectric oxide film.

2. The solid electrolytic capacitor of claim 1 , wherein the conductive polymer layer includes a polymer formed by chemical polymerization.

3. The solid electrolytic capacitor of claim 1 , wherein the sintered molded body includes tantalum.

4. The solid electrolytic capacitor of claim 1 , wherein the conductive polymer layer includes a polymer of 3,4-ethylene dioxythiophene or a derivative thereof.

5. The solid electrolytic capacitor of claim 1 , wherein the protrusions have an average diameter of 10 to 54 nanometers.

6. The solid electrolytic capacitor of claim 1 , wherein the protrusions are scattered on the film in the form of islands.

7. A method for forming a solid electrolytic capacitor, the method comprising forming a solid electrolytic layer on a sintered molded body formed of a valve acting metal powder, wherein a dielectric oxide film is formed on the sintered body, wherein the solid electrolytic layer is formed by a process that comprises forming protrusions that cover 1 to 20% of the surface of the dielectric film and have an average diameter of 10 to 102 nanometers, wherein the protrusions include manganese dioxide, and forming a conductive polymer layer on a surface of the protrusions and the dielectric oxide film.

8. The method of claim 7 , wherein the conductive polymer layer includes a polymer formed by chemical polymerization.

9. The method of claim 7 , wherein the sintered molded body includes tantalum.

10. The method of claim 7 , wherein the conductive polymer layer includes a polymer of 3,4-ethylene dioxythiophene or a derivative thereof.

11. The method of claim 7 , wherein the protrusions have an average diameter of 10 to 54 nanometers.

12. The method of claim 7 , wherein the protrusions are scattered on the film in the form of islands.

13. The method of claim 7 , further comprising performing a reforming process between formation of the protrusions and the conductive polymer layer.

14. The method of claim 7 , wherein the protrusions are formed by a process that includes pretreating the anode body in a humid environment and thereafter immersing the anode body in a manganese nitrate solution.

15. The method of claim 14 , wherein the anode body is heat treated after being pretreated in the humid environment but prior to being immersed in the manganese nitrate solution.

16. The method of claim 14 , wherein the manganese nitrate solution includes a surfactant.

17. The method of claim 14 , wherein the humid environment has a humidity of 8 g/m 3 or greater.

18. The method of claim 14 , wherein the humid environment has a specific relative humidity of 50% to 80%.

Assignments (2)
CHANGE OF NAME Recorded Dec 22, 2021
From: AVX CORPORATION
To: KYOCERA AVX COMPONENTS CORPORATION
Reel/Frame 058563/0762 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 23, 2015
From: AOKI, KIYOFUMI; NOBORIO, HIROMASA; TATSUNO, JUNYA; INAZAWA, KOJI
To: AVX CORPORATION
Reel/Frame 035002/0908 →
Priority Claims (1)
JP 2012-189520 · Aug 30, 2012 · national
Continuity (1)
Related Publication 20150255223A1 · Sep 10, 2015