IP Library Granted Patent US 9,806,605
Granted Patent B2
US 9,806,605 · App. 14/426,209 · Granted Oct 31, 2017

Voltage divider circuit having at least two kinds of unit resistors

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,806,605
App. No.
14/426,209
Granted
Oct 31, 2017
Kind
B2
Abstract

Provided is a voltage divider circuit having a small area and good accuracy of a division ratio. Among a plurality of resistors of the voltage divider circuit, each of resistors having a large resistance value, that is, resistors (1/4R, 1/2R, 1R, 9R, 10R) having high required accuracy of ratio includes first unit resistors ( 5 A) that have a first resistance value and are connected in series or connected in parallel to each other, and each of resistors having a small resistance value, that is, resistors (1/16R, 1/8R) having low required accuracy of ratio includes second unit resistors ( 5 B) that have a second resistance value smaller than the first resistance value and are connected in parallel to each other.

Claims (40)

1. A voltage divider circuit, comprising:

a plurality of resistors connected in series; and

a plurality of short circuit control elements respectively connected in parallel to the plurality of resistors and configured to respectively control selection or non-selection of the resistors, the plurality of resistors comprising:

a first resistor including a first unit resistor having a first resistance value, the first resistor including one or more first unit resistors connected in series or in parallel; and

a second resistor including a second unit resistor having a second resistance value, the second resistor including second unit resistors connected in parallel or in series,

the second resistance value being smaller than the first resistance value.

2. The voltage divider circuit according to claim 1 , wherein each of the first unit resistor and the second unit resistor comprises a resistance region and a low resistance region arranged at each end of the resistance region, the resistance regions of the first unit resistor and the second unit resistor being arranged on resistive elements different from each other, and

wherein the resistance regions of the first unit resistor and the second unit resistor are made of the same material having the same sheet resistance.

3. The voltage divider circuit according to claim 2 , wherein a width of the resistive element of the second unit resistor is the same as a width of the resistive element of the first unit resistor, and a length of the resistance region of the second unit resistor is different from a length of the resistance region of the first unit resistor.

4. The voltage divider circuit according to claim 3 , wherein the second unit resistor comprises the low resistance region arranged at a position other than an end of the resistive element.

5. The voltage divider circuit according to claim 2 ,

wherein the resistive element comprises three or more of the low resistance regions, and

wherein two or more of the second unit resistors share the one resistive element.

6. The voltage divider circuit according to claim 2 , wherein the second unit resistor comprises a first low resistance region arranged at a position other than an end of the resistive element, the second unit resistor being electrically connected to a second low resistance region of an adjacent second unit resistor, and being connected to a corresponding one of the plurality of short circuit control elements by wiring also from a short side direction of the resistive element.

7. The voltage divider circuit according to claim 6 , wherein the second unit resistor is connected to the second low resistance region of the adjacent second unit resistor with use of the same material as a material of the first low resistance region.

8. The voltage divider circuit according to claim 1 , wherein the second unit resistor is arranged at an end of the plurality of resistors, and a part of the second unit resistor functions also as a dummy resistor.

9. The voltage divider circuit according to claim 1 , further comprising a dummy resistor arranged between a resistive element forming the first unit resistor and a resistive element forming the second unit resistor.

10. The voltage divider circuit according to claim 1 , wherein the first unit resistor is arranged around a center of the plurality of resistors, and the second unit resistor is arranged at an end of the plurality of resistors.

11. The voltage divider circuit according to claim 1 ,

wherein the first unit resistor and the second unit resistor comprise the same polycrystalline polysilicon film, and

wherein an impurity concentration in the polycrystalline polysilicon film of the second unit resistor is higher than an impurity concentration of the polycrystalline polysilicon film of the first unit resistor.

12. A voltage divider circuit, comprising:

a plurality of resistors connected in series and divided into groups; and

fuses each connected in parallel to a respective one of the groups of said plurality of resistors, each group of said plurality of resistors comprising one or both of:

a first resistor including a first unit resistor having a first resistance value, the first resistor including one or more first unit resistors connected in series or in parallel; and

a second resistor including a second unit resistor having a second resistance value, the second resistor including second unit resistors connected in parallel or in series,

the second resistance value being smaller than the first resistance value.

13. The voltage divider circuit according to claim 12 , wherein each of the first unit resistor and the second unit resistor comprises a resistance region and a low resistance region arranged at each end of the resistance region, the resistance regions of the first unit resistor and the second unit resistor being arranged on resistive elements different from each other, and

wherein the resistance regions of the first unit resistor and the second unit resistor are made of the same material having the same sheet resistance.

14. The voltage divider circuit according to claim 13 , wherein a width of the resistive element of the second unit resistor is the same as a width of the resistive element of the first unit resistor, and a length of the resistance region of the second unit resistor is different from a length of the resistance region of the first unit resistor.

15. The voltage divider circuit according to claim 14 , wherein the second unit resistor comprises the low resistance region arranged at a position other than an end of the resistive element.

16. The voltage divider circuit according to claim 13 ,

wherein the resistive element comprises three or more of the low resistance regions, and

wherein two or more of the second unit resistors share the one resistive element.

17. The voltage divider circuit according to claim 12 , wherein the second unit resistor comprises a first low resistance region arranged at a position other than an end of the resistive element, the second unit resistor being electrically connected to a second low resistance region of an adjacent second unit resistor, and being connected to a corresponding one of the fuses by wiring also from a short side direction of the resistive element.

18. The voltage divider circuit according to claim 12 , further comprising a dummy resistor arranged between a resistive element forming the first unit resistor and a resistive element forming the second unit resistor.

19. The voltage divider circuit according to claim 12 , wherein the first unit resistor is arranged around a center of the plurality of resistors, and the second unit resistor is arranged at an end of the plurality of resistors.

20. The voltage divider circuit according to claim 12 ,

wherein the first unit resistor and the second unit resistor comprise the same polycrystalline polysilicon film, and

wherein an impurity concentration in the polycrystalline polysilicon film of the second unit resistor is higher than an impurity concentration of the polycrystalline polysilicon film of the first unit resistor.

Assignments (4)
CHANGE OF ADDRESS Recorded Jun 8, 2023
From: ABLIC INC.
To: ABLIC INC.
Reel/Frame 064021/0575 →
CHANGE OF NAME Recorded Mar 12, 2018
From: SII SEMICONDUCTOR CORPORATION
To: ABLIC INC.
Reel/Frame 045567/0927 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 10, 2016
From: SEIKO INSTRUMENTS INC.
To: SII SEMICONDUCTOR CORPORATION
Reel/Frame 038058/0892 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2015
From: TSUMURA, KAZUHIRO
To: SEIKO INSTRUMENTS INC.
Reel/Frame 035092/0872 →