Polycycloolefinic polymer formulation for an organic semiconductor
View Patent ↗Embodiments in accordance with the present invention relate generally to formulations for use in organic semiconductor layers of organic electronic devices, and more specifically in organic field effect transistors, to organic semiconductor layers prepared from such formulations, and to organic electronic devices and organic field effect transistors encompassing such organic semiconductor layers.
1. A formulation comprising an organic semiconductor (OSC) and a polycycloolefinic polymer comprising one or more pendant reactive groups.
2. The formulation according to claim 1 , wherein the reactive group comprises a hydroxyl portion or an olefinic portion that can crosslink with Parylene.
3. The formulation according to claim 1 , wherein the polycycloolefinic polymer is a norbornene-type polymer having one or more distinct types of repeating units of Formula I
wherein Z is selected from —CH 2 —, —CH 2 —CH 2 — or —O—, m is an integer from 0 to 5, each of R 1 , R 2 , R 3 and R 4 are independently selected from H, a C 1 to C 25 hydrocarbyl, a C 1 to C 25 halohydrocarbyl or a C 1 to C 25 perhalocarbyl group, and wherein in at least one repeating unit one or more of R 1-4 denote or comprise a reactive group.
4. The formulation according to claim 1 , wherein the polycycloolefinic polymer comprises one or more repeating units selected from the following formulae
where Y is alkyl or alkoxy with 1 to 20 C atoms or alkylcarbonyl with 2 to 20 C atoms, n is an integer from 0 to 8, a and b are independently of each other an integer from 0 to 7, wherein a+b≦7, and c and d are independently of each other 0 or 1.
5. The formulation according to claim 4 , wherein the polycycloolefinic polymer comprises one or more repeating units selected from the following formulae
where n1 is 0, 1, 2, 3, 4 or 5, a and b are independently of each other an integer from 0 to 7, and wherein a+b≦7.
6. The formulation according to claim 4 , wherein the polycycloolefinic polymer comprises one or more repeating units selected from the following formulae
NB
1
MeNB
2
BuNB
3
HexNB
4
OctNB
5
DecNB
6
CNB
7
PNB
8
PENB
9
PBNB
10.
7. The formulation according to claim 5 , wherein the polycycloolefinic polymer comprises one or more repeating units selected from the following formulae
NB
1
MeNB
2
BuNB
3
HexNB
4
OctNB
5
DecNB
6
CNB
7
PNB
8
PENB
9
PBNB
10.
8. The formulation according to claim 5 , wherein the polycycloolefinic polymer comprises one or more repeating units selected from the following formulae
NB
1
MeNB
2
BuNB
3
HexNB
4
OctNB
5
DecNB
6
CNB
7
PNB
8
PENB
9
PBNB
10.
9. The formulation according to claim 1 , wherein the OSC comprises a small molecule.
10. The formulation according to claim 9 , wherein the OSC comprises an oligoacene that is optionally substituted with two or more alkylsilylethynyl groups.
11. The formulation according to claim 1 , further comprising one or more organic solvents.
12. The formulation according to claim 11 , wherein the organic solvent is selected from cyclohexylene, mesitylene, xylene, diethylbenzene, indane and tetralin.
13. An OSC layer obtained through the use of a formulation according to claim 1 .
14. A process of preparing an OSC layer, comprising depositing a formulation according to claim 1 onto a substrate and, in case the formulation comprises a solvent, removing the solvent.
15. An organic electronic (OE) device comprising an OSC layer that is formed from a formulation comprising an organic semiconductor (OSC) and a polycycloolefinic polymer that includes one or more pendant reactive groups, said OE device further comprising a dielectric or passivation layer obtained by vapor deposition of a p-xylylene onto said OSC layer.
16. A process of preparing an OE device according to claim 15 , comprising providing a dielectric or passivation layer obtained by vapor deposition of a p-xylylene onto said OSC layer.
17. A process of preparing an OE device according to claim 15 , comprising
depositing a formulation comprising an organic semiconductor (OSC) and a polycycloolefinic polymer comprising one or more pendant reactive groups onto a substrate to form an OSC layer, and if the formulation includes a solvent, removing the solvent,
optionally annealing the OSC layer, and
depositing a layer of a p-xylylene onto the OSC layer by vapor deposition.
18. The organic electronic device according to claim 15 , which is an Organic Field Effect Transistor (OFET), Organic Thin Film Transistor (OTFT), Organic Light Emitting Diode (OLED) or Organic Photovoltaic (OPV) device or Organic Photodetector (OPD).
19. The organic electronic device according to claim 18 , which is a top gate OFET or bottom gate OFET.
20. The organic electronic device according to claim 19 , wherein the top gate OFET comprises a substrate ( 1 ), source and drain electrodes ( 2 a , 2 b ), an OSC layer ( 3 ) obtained with a formulation comprising an organic semiconductor (OSC) and a polycycloolefinic polymer comprising one or more pendant reactive groups, a dielectric layer ( 4 ) comprising a poly(p-xylylene) and serving as gate insulator, and gate electrode ( 5 ).
21. A process for preparing an OFET according to claim 20 , which comprises:
forming source and drain electrodes ( 2 a , 2 b ) on a substrate ( 1 ),
forming an OSC layer ( 3 ) from a formulation comprising an organic semiconductor (OSC) and a polycycloolefinic polymer comprising one or more pendant reactive groups on the source and drain electrodes ( 2 a , 2 b ),
forming a dielectric layer ( 4 ) by vapor deposition of a p-xylylene on the OSC layer ( 3 ),
forming a gate electrode ( 5 ) on the dielectric layer ( 4 ).
22. The organic electronic device according to claim 19 , wherein the bottom gate OFET comprises a substrate ( 1 ), a gate electrode ( 5 ), a dielectric layer ( 4 ) serving as gate insulator, source and drain electrodes ( 2 a , 2 b ), an OSC layer ( 3 ) obtained with a formulation comprising an organic semiconductor (OSC) and a polycycloolefinic polymer comprising one or more pendant reactive groups, and a passivation layer ( 6 ) comprising a poly(p-xylylene).
23. A process for preparing an OFET according to claim 22 , which comprises:
forming a gate electrode ( 5 ) on a substrate ( 1 ),
forming a dielectric layer ( 4 ) on the the substrate ( 1 ) and the gate electrode ( 5 ),
forming source and drain electrodes ( 2 a , 2 b ) on the dielectric layer ( 4 ).
forming an OSC layer ( 3 ) from a formulation comprising an organic semiconductor (OSC) and a polycycloolefinic polymer comprising one or more pendant reactive groups on the source and drain electrodes ( 2 a , 2 b ) and the dielectric layer ( 4 ),
forming a passivation layer ( 6 ) by vapor deposition of a p-xylylene on the OSC layer ( 3 ).
24. A product or assembly comprising an OE device according to claim 15 , which is an Integrated Circuit (IC), a Radio Frequency Identification (RFID) tag, a security marking or security device containing an RFID tag, a Flat Panel Display (FPD), a backplane of an FPD, a backlight of an FPD, an electrophotographic device, an electrophotographic recording device, an organic memory device, a pressure sensor, an optical sensor, a chemical sensor, a biosensor or a biochip.