Optoelectronic component and method for the production thereof

1. An optoelectronic component comprising:

a layer structure comprising a luminous-active layer,

wherein the luminous-active layer has a higher density of V-defects in a first lateral region than in a second lateral region,

wherein a metallic, electrical conductive contact layer is arranged on the layer structure,

wherein the contact layer has an open region and a closed region,

wherein the closed region of the contact layer is arranged above the first lateral region in a growth direction of the layer structure, and

wherein the open region of the contact layer is arranged above the second lateral region in the growth direction of the layer structure.

2. The optoelectronic component according to claim 1 , wherein the luminous-active layer has a plurality of quantum films succeeding one another in the growth direction of the layer structure.

3. The optoelectronic component according to claim 2 , wherein a barrier is formed between two quantum films, and

wherein the barrier is thinner in the growth direction in the region of a V-defect than in the second lateral region.

4. The optoelectronic component according to claim 2 , wherein a first quantum film has a lower indium concentration in the region of a V-defect than in the second lateral region.

5. The optoelectronic component according to claim 1 , wherein at least some V-defects completely penetrate through the luminous-active layer in the growth direction of the layer structure.

6. The optoelectronic component according to claim 1 , wherein the layer structure has a p-doped layer, and

wherein the V-defects widen in the direction of the p-doped layer.

7. The optoelectronic component according to claim 6 , wherein the p-doped layer in the region of a V-defect extends into the V-defect.

8. The optoelectronic component according to claim 6 , wherein a separating layer is arranged between the luminous-active layer and the p-doped layer, and

wherein the separating layer is thinner in the growth direction in the region of a V-defect than in the second lateral region.

9. The optoelectronic component according to claim 1 , wherein a contact and mirror layer is arranged on the layer structure, and

wherein the contact and mirror layer comprises a different material in the first lateral region than in the second lateral region.

10. The optoelectronic component according to claim 1 , wherein the first lateral region forms nodes of a rectangular lattice, a hexagonal lattice or a triangular lattice.

11. The optoelectronic component according to claim 1 , wherein each V-defect in a plan view has the form of an inverse pyramid having six or twelve facets.

12. The optoelectronic component according to claim 1 , wherein in a plan view the V-defects have a honeycomb-like structure.

13. A method for producing an optoelectronic component comprising the following steps:

providing a substrate;

growing a layer structure onto the substrate,

wherein the layer structure comprises a luminous-active layer,

wherein V-defects are embedded into the luminous-active layer,

wherein more V-defects per lateral area are embedded in a first lateral region of the luminous-active layer than in a second lateral region of the luminous-active layer,

wherein a metallic, electrical conductive contact layer is arranged on the layer structure,

wherein the contact layer has an open region and a closed region,

wherein the closed region of the contact layer is arranged above the first lateral region in a growth direction of the layer structure, and

wherein the open region of the contact layer is arranged above the second lateral region in the growth direction of the layer structure.

14. The method according to claim 13 , wherein a mask layer having an opening in the first lateral region is created before the growth of the luminous-active layer.

15. The method according to claim 13 , Wherein elevations are created at a surface of the substrate and wherein an elevation is created at the surface of the substrate in the first lateral region.

16. The method according to claim 13 , wherein the growth is carried out with MOVPE and wherein during growth at least one of growth conditions is adjusted as follows:

growth temperature of at most 950° C.,

growth pressure of at least 10 mbar.

17. The method according to claim 13 , wherein the first lateral region forms an approximately regularly lateral lattice or the first lateral region and the second lateral region are embodied as alternating strips.

18. An optoelectronic component comprising:

a layer structure comprising a luminous-active layer,

wherein the luminous-active layer has a higher density of V-defects in a first lateral region than in a second lateral region and wherein the first lateral region forms an approximately regularly lateral lattice or the first lateral region and the second lateral region are embodied as alternating strips,

wherein a metallic, electrical conductive contact layer is arranged on the layer structure,

wherein the contact layer has an open region and a closed region,

wherein the closed region of the contact layer is arranged above the first lateral region in a growth direction of the layer structure, and

wherein the open region of the contact layer is arranged above the second lateral region in the growth direction of the layer structure.

19. The optoelectronic component according to claim 18 , wherein the strips that form the second lateral region have a width of between 3 μm and 8 μm and wherein the strips that form the first lateral region have a width of between 1 μm and 10 μm.