IP Library Granted Patent US 9,820,025
Granted Patent B2
US 9,820,025 · App. 14/430,438 · Granted Nov 14, 2017

MEMS device and process

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Quick Facts
Patent No.
US 9,820,025
App. No.
14/430,438
Granted
Nov 14, 2017
Kind
B2
Abstract

This application relates to MEMS devices, especially MEMS capacitive transducers and to processes for forming such MEMS transducer that provide increased robustness and resilience to acoustic shock. The application describes a MEMS transducer ( 400 ) having at least one membrane layer ( 101 ) supported so as to define a flexible membrane. A strengthening layer ( 401; 701 ) is mechanically coupled to the membrane layer and is disposed around the majority of a peripheral area of the flexible membrane but does not extend over the whole flexible membrane. The strengthening layer, which in some embodiments may be formed from the same material as the membrane electrode ( 102 ) being disposed in the peripheral area helps reduce stress in membrane at locations that otherwise may be highly stressed in acoustic shock situations. The membrane may be supported over a substrate cavity and the strengthening layer may be provided in an area of the membrane that could make contact with the edge ( 202 ) of the substrate cavity.

Claims (28)

1. A MEMS transducer comprising:

a substrate having a cavity,

at least one membrane layer supported relative to the substrate so as to define a membrane having a flexible part;

a backplate provided on the other side of the membrane to the substrate; and

a strengthening layer disposed on said membrane layer;

wherein the strengthening layer is disposed around the majority of a peripheral area of the membrane and extends inwardly from the peripheral area beyond a perimeter of the cavity onto said flexible part of the membrane but does not extend over the whole flexible part of the membrane.

2. A MEMS transducer as claimed in claim 1 wherein the strengthening layer extends radially from a support structure supporting the membrane layer onto the flexible part of the membrane layer.

3. A MEMS transducer as claimed in claim 2 wherein the strengthening layer forms part of a side wall of the support structure.

4. A MEMS transducer as claimed in claim 1 wherein the membrane layer is supported relative to a first surface of a substrate, the substrate having at least one substrate cavity therein defining an area of opening in the first surface of the substrate, wherein the perimeter of said area of opening is at least partly within an area underlying said flexible membrane; and wherein the strengthening layer is disposed on the membrane layer such that the perimeter of said area of opening at least partly underlies the peripheral area of the membrane having said strengthening layer.

5. A MEMS transducer as claimed in claim 4 wherein the strengthening layer is disposed on the membrane layer in an area of the membrane which may make contact with the perimeter of the opening area if sufficiently deflected.

6. A MEMS transducer as claimed in claim 1 wherein the strengthening layer is disposed around 75% or more of the perimeter of the membrane.

7. A MEMS transducer as claimed in claim 1 wherein the strengthening layer is disposed such that radially inside the strengthening layer is a circumferential area of flexible membrane, the majority of which is free of the material of the strengthening layer.

8. A MEMS transducer as claimed in claim 1 wherein the strengthening layer comprises a layer of material which has at least one of: a greater elasticity; a greater plasticity and a greater ductility than the material of the membrane layer.

9. A MEMS transducer as claimed in claim 1 wherein the strengthening layer comprises a layer of material which is in greater tensile stress than the material of the membrane layer.

10. A MEMS transducer as claimed in claim 1 wherein the strengthening layer comprises a layer comprising at least one of the group of: titanium, aluminium, copper and gold or an alloy thereof.

11. A MEMS transducer as claimed in claim 1 wherein the strengthening layer comprises a plurality of layers of different materials having different materials characteristics.

12. MEMS transducer as claimed in claim 1 wherein a first strengthening layer is coupled to the membrane layer in said peripheral area and the transducer further comprises a second strengthening layer having a different geometry on the membrane layer to the first strengthening layer.

13. A MEMS transducer as claimed in claim 1 wherein the strengthening layer has a thickness of between about 30 and 100 nm inclusive.

14. A MEMS transducer as claimed in claim 1 wherein the membrane structure comprises a membrane electrode and wherein the strengthening layer is formed from the same material as the membrane electrode and wherein the material forming the membrane electrode is discrete from the strengthening layer disposed in the peripheral area of the membrane.

15. A MEMS transducer as claimed in claim 14 comprising a first area of first material disposed so as to form a membrane electrode and a second area of first material disposed to form said strengthening layer wherein said second area substantially surrounds said first area wherein between the first and second areas there is a third area which is mainly devoid of any first material.

16. A MEMS transducer as claimed in claim 1 wherein the membrane layer is supported above a substrate and the strengthening layer is disposed on the opposite side of the membrane layer to the substrate.

17. A MEMS transducer as claimed in claim 1 wherein said transducer comprises a microphone.

18. An electronic device comprising a MEMS transducer as claimed in claim 1 wherein said device is at least one of: a portable device; a battery powered device; an audio device; a computing device; a communications device; a personal media player; a mobile telephone; a games device; and a voice controlled device.

19. A method of fabricating a MEMS transducer having a membrane and a substrate having a cavity, the method comprising:

forming a membrane layer supported relative to the substrate to form at least part of said membrane;

providing a backplate on the other side of the membrane to the substrate; and

forming a strengthening layer disposed on an area of said membrane layer that corresponds to a peripheral area of the membrane;

wherein the strengthening layer extends inwardly from the peripheral area beyond a perimeter of the cavity onto said flexible part of the membrane and wherein the strengthening layer does not extend over the whole flexible part of the membrane.

Assignments (7)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2017
From: CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR LTD.
To: CIRRUS LOGIC, INC.
Reel/Frame 043496/0665 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 2, 2015
From: CIRRUS LOGIC INTERNATIONAL (UK) LTD.
To: CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR LTD.
Reel/Frame 035806/0389 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 2, 2015
From: HOEKSTRA, TSJERK; JENKINS, COLIN ROBERT
To: CIRRUS LOGIC INTERNATIONAL (UK) LIMITED
Reel/Frame 035323/0845 →
CHANGE OF NAME Recorded Apr 1, 2015
From: WOLFSON MICROELECTRONICS PLC
To: WOLFSON MICROELECTRONICS LTD
Reel/Frame 035353/0409 →
CHANGE OF NAME Recorded Apr 1, 2015
From: WOLFSON MICROELECTRONICS LTD
To: CIRRUS LOGIC INTERNATIONAL (UK) LTD.
Reel/Frame 035353/0413 →
CHANGE OF NAME Recorded Mar 23, 2015
From: WOLFSON MICROELECTRONICS PLC
To: WOLFSON MICROELECTRONICS LIMITED
Reel/Frame 035259/0559 →
CHANGE OF NAME Recorded Mar 23, 2015
From: WOLFSON MICROELECTRONICS LIMITED
To: CIRRUS LOGIC INTERNATIONAL (UK) LTD
Reel/Frame 035232/0716 →