Electroacoustic component and method for the production thereof

1. An electroacoustic component, comprising:

a piezo layer;

an electrode layer above the piezo layer and configured to, when a voltage is applied to electrode layer, cause propagation of acoustic waves in the electroacoustic component, the propagation having a main mode having a frequency f m and a secondary mode having a frequency f add ;

a separating layer, wherein the separating layer comprises a material having an opposite thickness dependence for the frequencies f m , f add ; and

a temperature compensation layer between the electrode layer and the separating layer.

2. The electroacoustic component according to claim 1 , wherein:

the main mode is a Rayleigh mode and the secondary mode is a Love mode; and

the separating layer is arranged above the electrode layer.

3. The electroacoustic component according to claim 1 , further comprising at least one of a bottom adhesion layer between the piezo layer and the electrode layer or a top adhesion layer between the electrode layer and the temperature compensation layer.

4. The electroacoustic component according to claim 3 , wherein:

the piezo layer comprises LiNbO 3 ;

at least one of the bottom adhesion layer or the top adhesion layer comprise(s) Ti;

the electrode layer comprises at least one of Cu or Ag; and

the separating layer comprises Si 3 N 4 .

5. The electroacoustic component according to claim 4 , comprising a bottom adhesion layer and a top adhesion layer, wherein:

the piezo layer comprises 128° Y-X cut LiNbO 3 ;

the bottom adhesion layer comprises a 5.5 nm Ti layer;

the electrode layer comprises a 2.5 nm thick Ag layer and a 160 nm thick Cu layer thereon;

the top adhesion layer comprises a 5.5 nm thick Ti layer;

the temperature compensation layer comprises a 700 nm to 730 nm thick SiO2 layer; and

the separating layer comprises an 80 nm to 140 nm thick Si 3 N 4 layer.

6. The electroacoustic component according to claim 5 , wherein the separating layer has a thickness of 110 nm.

7. The electroacoustic component according to claim 4 , wherein:

the component is part of a duplexer operating with a surface acoustic wave (SAW) and having a transmission filter and a reception filter; and

the transmission filter has a metallization ratio of η=0.44 and the reception filter has a metallization ratio of η=0.55.

8. A method for producing an electroacoustic component having a main mode having a frequency f m and a secondary mode having a frequency f add , comprising:

arranging an electrode layer above a piezo layer;

arranging a separating layer above the electrode layer;

arranging a temperature compensation layer between the electrode layer and the separating layer; and

separating the frequencies f m and f add by increasing the thickness of the separating layer.

9. The method according to claim 8 , wherein manufacturing variations are minimized by spatially resolved reduction of the thickness of the separating layer.

10. A method for producing an electroacoustic component, the method comprising:

forming a piezo layer over a wafer;

forming an electrode layer over the piezo layer;

forming a temperature compensation layer over the electrode layer;

forming a separating layer above the electrode layer and over the temperature compensation layer;

taking measurements to determine a frequency of a main mode and a frequency of a secondary mode; and

altering a thickness of the separating layer based upon the measurements.

11. The method according to claim 10 , wherein altering the thickness comprises increasing the thickness of the separating layer to separate the frequency of the main mode from the frequency of the secondary mode.

12. The method according to claim 10 , wherein altering the thickness comprises removing material of the separating layer.

13. The method according to claim 10 , wherein the forming steps form the piezo layer, electrode layer and separating layer of a plurality of electroacoustic components; and

wherein taking the measurements comprises taking measurements of selected ones of the electroacoustic components.

14. The method according to claim 13 , further comprising determining locations of the wafer based on the measurements, wherein the altering comprises altering the thickness of the separating layer based on the determined locations.

15. The method according to claim 10 , wherein manufacturing variations are compensated by spatially resolved reduction of the thickness of the separating layer.

16. The method according to claim 10 , further comprising forming an adhesion layer between the piezo layer and the electrode layer or between the electrode layer and the temperature compensation layer.

17. The method according to claim 16 , wherein:

the piezo layer comprises LiNbO3;

the adhesion layer comprises Ti;

the electrode layer comprises Cu or Ag; and

the separating layer comprises Si 3 N 4 .

18. A method of suppressing a secondary mode having a frequency f add , the method comprising:

applying a voltage to an electrode layer of an electroacoustic component such that acoustic waves propagate in the electroacoustic component, the propagation including a main mode having a frequency f m , and the secondary mode, wherein the electrode layer is arranged above a piezo layer of the electroacoustic component, a separating layer of the electroacoustic component is arranged above the electrode layer, and a temperature compensation layer of the electroacoustic component is arranged between the electrode layer and the separating layer; and

suppressing the secondary mode, based on a thickness of the separating layer, wherein the separating layer comprises a material having an opposite thickness dependence for the frequencies f m , f add .