Method for producing hydrosilanes containing carbon

1. A process for preparing carbon-containing hydridosilanes, in which

an optionally boron- or phosphorus-doped hydridosilane is reacted

without catalyst and reducing agent

with at least one carbon source selected from

linear or branched carbosilanes of the generic formula Si b H 2b+2−y R y where b≧2, 1≦y≦2b+2 and R=C 1 -C 10 -alkyl, C 6 -C 10 -aryl, C 7 -C 14 -aralkyl

cyclic carbosilanes of the generic formula Si c H 2c−y R y where c≧3, 1≦y≦2c and R=C 2 -C 10 -alkyl, C 6 -C 10 -aryl, C 7 -C 14 -aralkyl,

halogenated hydrocarbons of the generic formula C n H 2n+2−y X y where 1≦n≦5, 1≦y ≦12 and X=F, Cl, Br, I,

carbenes of the generic formula CRR′ with R, R′ =

—H, —F, —Br, —I, —C 1 -C 10 -(cyclo)alkyl, —C 2 -C 10 -(cyclo)alkenyl, —C 6 -C 10 -aryl,

—C 1 -C 10 -(cyclo)heteroalkyl, —C 2 -C 10 -(cyclo)heteroalkenyl, —C 5 -C 10 -heteroaryl,

—C 7 -C 14 -aralkyl,

—OR″ where R″ =—C 1 -C 10 -(cyclo)alkenyl, —C 2 -C 10 -(cyclo)alkenyl, —C 6 -C 10 -aryl,

—NR′″ 2 where R′″=—C 1 -C 10 -(cyclo)alkyl, —C 2 -C 10 -(cyclo)alkenyl, —C 6 -C 10 -aryl,

—Si n R IV 2n+1 where R IV =—H, —C 1 -C 10 -(cyclo)alkyl, —C 2 -C 10 -(cyclo)alkenyl, —C 6 -C 10 -aryl,

—(CO)—R v where R v =—H, —C 1 -C 10 -(cyclo)alkyl, —C 2 -C 10 -(cyclo)alkenyl, —C 6 -C 10 -aryl,

—(CO)—OR vi where R vi =—H, —C 1 -C 10 -(cyclo)alkyl, —C 2 -C 10 -(cyclo)alkenyl, —C 6 -C 10 -aryl,

—CN, —NC,

SR vii where R vii =—H, —C 1 -C 10 -(cyclo)alkyl, —C 2 -C 10 -(cyclo)alkenyl, —C 6 -C 10 -aryl,

—S(O) 2 R viii where R viii =—H, —C 1 -C 10 -(cyclo)alkyl, —C 2 -C 10 -(cyclo)alkenyl, —C 6 -C 10 -aryl,

—P(R ix ) 2 where R ix =—H, —C 1 -C 10 -(cyclo)alkyl, —C 2 -C 10 -(cyclo)alkenyl, —C 6 -C 10 -aryl,

or where R and R′ together represent a bidentate bridging radical selected from =C 3 -C 20 -(cyclo)alkyl, =C 3 -C 20 -(cyclo)alkenyl, =C 3 -C 20 -(cyclo)heteroalkyl, =C 3 -C 20 -(cyclo)heteroalkenyl or =C 6 -C 14 -(hetero)aralkyl,

—CO, CN − ,

alkyl azides of the generic formula N 3 R x where R x =—C 1 -C 10 -(cyclo)alkyl, —C 2 -C 10 -(cyclo)alkenyl, —C 6 -C 10 -aryl, —C 1 -C 10 -(cyclo)heteroalkyl, —C 2 -C 10 -(cyclo)heteroalkenyl, C 5 -C 10 -heteroaryl, —C 7 -C 14 -aralkyl,

diazomethane H 2 CN 2 ,

dimethyl sulphate C 2 H 6 O 4 S, or

alcohols of the generic formula HOR xi , where R xi =—C 1 -C 10 -(cyclo)alkyl, —C 2 -C 10 (cyclo)alkenyl, —C 6 -C 10 -aryl, —C 1 -C 10 -(cyclo)heteroalkyl, —C 2 -C 10 (cyclo)heteroalkenyl, —C 5 -C 10 -heteroaryl, or —C 7 -C 14 -aralkyl.

2. The process according to claim 1 , wherein the hydridosilane used as the reactant has the generic formula Si n {BH} x {PH} y H 2n+2 where n=3−10, x=0 or 1 and y =0 or 1, with the proviso that at least one of the parameters x and y=0.

3. The process according to claim 2 , wherein the hydridosilane used as the reactant has the generic formula Si n H 2+l where n=3−10.

4. The process according to claim 3 , wherein the reaction with the at least one carbon source is effected in the presence of at least one further hydridosilane compound having a weight-average molecular weight of at least 500 g/mol.

5. The process according to claim 3 , wherein the reaction of the hydridosilane with the carbon source is effected in the presence of at least one dopant selected from the group consisting of AlMe 3 , AlCl 3 , BCl 3 , BF 3 , B 2 H 6 , BH 3 :THF, BEt 3 ,BMe 3 , PH 3 and P 4 .

6. The process according to claim 1 , wherein the carbon source has a weight-average molecular weight of 300 to 4000 g/mol.

7. The process according to claim 1 , wherein the reaction is effected thermally and/or with electromagnetic irradiation.

8. A carbon-containing hydridosilane oligomer preparable by a process according to claim 1 .

9. A method for producing an electronic or optoelectronic component layer(s) comprising forming said layer(s) from a composition comprising a hydridosilane oligomer produced according to the process of claim 1 .

10. A photovoltaic, transitor or other electronic or optoeltronic component layer(s) produced by the method according to claim 9 .

11. A method for producing a silicon-containing layer(s) comprising forming layer(s) from a composition comprising a carbon-containing hydridosilane oligomer preparable according to claim 1 .

12. Silicon-containing layer(s) produced by the method according to claim 11 .

13. Elemental silicon-containing layer(s) produced by the according to claim 11 .