OLED display and manufacturing method thereof

1. An organic light-emitting diode (OLED) display comprising a plurality of sub-pixel units,

wherein each of the sub-pixel units comprises a first region and a second region; the first region comprises a first electrode, a first organic material functional layer and a second electrode disposed in order on a base substrate; and the second region comprises a third electrode, a second organic material functional layer and a fourth electrode disposed in order on the base substrate;

wherein both the first electrode and the third electrode comprise an opaque metal layer, and both the second electrode and the fourth electrode are translucent metal electrodes;

the first electrode, the first organic material functional layer and the second electrode constitute a first micro-cavity, the third electrode, the second organic material functional layer and the fourth electrode constitute a second micro-cavity, and the first micro-cavity and the second micro-cavity have different micro-cavity effects;

wherein the first electrode and the third electrode have different reflectivity; and

wherein for the first micro-cavity, a top surface of the first electrode that contacts the first organic material functional layer is a plane; and for the second micro-cavity, a top surface of the third electrode that contacts the second organic material functional layer is a non-planar surface.

2. The OLED display of claim 1 , wherein the first micro-cavity has a thickness different from that of the second micro-cavity.

3. The OLED display of claim 2 , wherein each of the sub-pixel units further comprises a thin film transistor disposed between the base substrate and the first electrode or the third electrode.

4. The OLED display of claim 1 , wherein the top surface of the third electrode that contacts the second organic material functional layer has roughness of a predetermined value.

5. The OLED display of claim 4 , further comprising:

a planarization layer disposed between the base substrate and the first electrode as well as the third electrode;

wherein a top surface of the planarization layer under the third electrode has roughness of a predetermined value or an uneven shape.

6. The OLED display of claim 4 , wherein each of the sub-pixel units further comprises a this film transistor disposed between the base substrate and the first electrode or the third electrode.

7. The OLED display of claim 1 , wherein the top surface of the third electrode that contacts the second organic material functional layer has an uneven shape.

8. The OLED display of claim 7 , further comprising:

a planarization layer disposed between the base substrate and the first electrode as well as the third electrode;

wherein a top surface of the planarization layer under the third electrode has roughness of a predetermined value or an uneven shape.

9. The OLED display of claim 7 , wherein each of the sub-pixel units further comprises a thin film transistor disposed between the base substrate and the first electrode or the third electrode.

10. The OLED display of claim 1 , wherein each of the sub-pixel units further comprises a thin film transistor disposed between the base substrate and the first electrode or the third electrode.

11. The OLED display of claim 10 , wherein the first electrode and the third electrode are electrically connected, the second electrode and the fourth electrode are electrically connected; and

a drain electrode of the thin film transistor is electrically connected with the first electrode and the third electrode.

12. A manufacturing method of an organic light-emitting diode (OLED) display comprising a plurality of sub-pixel units, the method comprising:

forming a first electrode and a third electrode on a base substrate in a first region and a second region of each of the sub-pixel units respectively; the first electrode and the third electrode both comprising an opaque metal layer;

forming a first organic material functional layer and a second organic material functional layer in the first region and the second region respectively on the substrate formed with the first electrode and the third electrode, and

forming a second electrode and a fourth electrode in the first region and the second region respectively on the substrate formed with the first organic material functional layer and the second organic material functional layer, the second electrode and the fourth electrode both being translucent metal electrodes,

wherein the first electrode, the first organic material functional layer and the second electrode constitute a first micro-cavity, the third electrode, the second organic material functional layer and the fourth electrode constitute a second micro-cavity, and the first micro-cavity and the second micro-cavity have different thicknesses,

wherein the first electrode and the third electrode have differently reflectivity; and

wherein for the first micro-cavity, a top surface of the first electrode that contacts the first organic material functional layer is a plane; and for the second micro-cavity, a top surface of the third electrode that contacts the second organic material functional layer is a non-planar surface.

13. The method of claim 12 , further comprising:

forming a thin film transistor between the base substrate and the first electrode or the third electrode in each of the sub-pixel units.

14. A manufacturing method of an organic light-emitting diode (OLED) display comprising a plurality of sub-pixel units, the method comprising:

forming a first electrode and a third electrode on a base substrate in a first region and a second region of each of the sub-pixel units respectively; the first electrode and the third electrode both comprising an opaque metal layer, and a top surface of the first electrode is a plane, a top surface of the third electrode is a non-planar surface;

forming a first organic material functional layer and a second organic material functional layer in the first region and the second region respectively on the substrate formed with the first electrode and the third electrode, and

forming a second electrode and a fourth electrode in the first region and the second region respectively on the substrate formed with the first organic material functional layer and the second organic material functional layer, the second electrode and the fourth electrode both being translucent metal electrodes,

wherein the first electrode, the first organic material functional layer and the second electrode constitute a first micro-cavity, the third electrode, the second organic material functional layer and the fourth electrode constitute a second micro-cavity.

15. The method of claim 14 , wherein a top surface of the third electrode has roughness of a predetermined value or an uneven shape;

the method further comprising: forming a planarization layer between the base substrate and the first electrode as well as the third electrode;

wherein forming of the planarization layer comprises:

forming a planarization layer film on the base substrate;

dry etching the planarization layer film in the second region to allow a surface of the planarization layer film to have roughness of a predetermined value or an uneven shape, thereby forming the planarization layer.

16. The method of claim 15 , further comprising:

forming a thin film transistor between the base substrate and the first electrode or the third electrode in each of the sub-pixel units.

17. The method of claim 14 , further comprising:

forming a thin film transistor between the base substrate and the first electrode or the third electrode in each of the sub-pixel units.