Corrosion method of passivation layer of silicon wafer
A corrosion method of a passivation layer ( 320 ) of a silicon wafer ( 300 ) includes: pouring hydrofluoric acid solution ( 100 ) into a container ( 200 ) with an open top; putting the silicon wafer ( 300 ) to the opening of the container ( 200 ) and one side of the silicon wafer ( 300 ) with the passivation layer ( 320 ) is opposite to the hydrofluoric acid solution ( 100 ); the hydrogen fluoride gas generated from the volatilization of the hydrofluoric acid solution ( 100 ) corrodes the passivation layer ( 320 ) of the silicon wafer ( 300 ), the corrosion time is larger or equal to (thickness of the passivation layer/corrosion rate). By means of the corrosion of the passivation layer of silicon wafer by the fluoride gas generated from the volatilization of the hydrofluoric acid solution, the fluoride gas can fully touch the passivation layer; therefore the passivation layer can be completely corroded, and the corrosion precision is high.
1. A method of corroding a passivation layer of a silicon wafer, comprising:
pouring hydrofluoric acid solution into a container having an opening defined by a rim on a top of the container;
placing the silicon wafer at the opening of the container, one side of the silicon wafer having the passivation layer facing the hydrofluoric acid solution, the silicon wafer being in direct contact with the rim on the top of the container;
introducing an inert gas to a bottom of the hydrofluoric acid solution at a bottom of the container from the bottom of the container and heating the hydrofluoric acid solution; and
corroding the passivation layer of the silicon wafer using hydrogen fluoride gas volatilized from the hydrofluoric acid solution,
wherein a distance between a liquid surface of the hydrofluoric acid solution and the side of the silicon wafer having the passivation layer ranges 15-30 cm,
wherein a time of the corroding is greater or equal to a ratio of a thickness of the passivation layer to a corrosion rate; the thickness has a unit of centimeter and the corrosion rate has a unit of angstrom/min; the silicon wafer comprises a main body defining a plurality of back cavities; the passivation layer is formed between the back cavities and the main body; the passivation layer covers the entire surface on the one side of the silicon wafer facing the hydrofluoric acid solution; the passivation layer directly contacts the back cavities and forms a bottom of the back cavities; and the hydrogen fluoride gas goes through the back cavities and corrodes the passivation layer.
2. The method according to claim 1 , wherein the time of the corroding is 1.2 times of the ratio of the thickness of the passivation layer to the corrosion rate.
3. The method according to claim 1 , wherein the inert gas is selected from the group consisting of argon and helium.
4. The method according to claim 1 , wherein a flow rate of the inert gas ranges from 0.01 sccm to 1000 sccm.
5. The method according to claim 1 , wherein the hydrofluoric acid solution has a percent concentration by mass of from 20% to 49%.
6. The method according to claim 1 , wherein the corroding the passivation layer of the silicon wafer using the hydrogen fluoride gas volatilized from the hydrofluoric acid solution is performed in a ventilated environment.
7. The method according to claim 1 , wherein placing the silicon wafer at the opening of the container seals the opening of the container.
8. The method according to claim 1 , wherein the number of the silicon wafer is two or more.
9. The method according to claim 1 , wherein the passivation layer is a silicon dioxide layer or silicon nitride layer.
10. The method according to claim 1 , wherein the passivation layer has a back cavity on the side facing the hydrofluoric acid solution, the hydrogen fluoride gas goes through the back cavity and corrodes the passivation layer.
11. The method according to claim 1 , wherein the silicon wafer comprises a main body, a first dielectric layer, and a second dielectric layer, the first dielectric layer and the second dielectric layer are located at opposite sides of the main body, the passivation layer is the first dielectric layer, the first dielectric layer faces the hydrofluoric acid solution and is corroded by the hydrogen fluoride gas, the second dielectric layer is not in contact with the hydrogen fluoride gas.