Method for producing a multiplicity of optoelectronic semiconductor components
View Patent ↗Optoelectronic semiconductor devices and methods for producing optoelectronic semiconductor devices are disclosed. In an embodiment the method includes applying a plurality of arrangements of electrically conductive first and second contact elements on an auxiliary carrier, applying an optoelectronic semiconductor chip on the second contact element of each arrangement and electrically conductively connecting the optoelectronic semiconductor chip to the first contact element for each arrangement. The method further includes encapsulating the first contact elements and the second contact elements with an encapsulation material to form an encapsulation body and singulating the encapsulation body into a plurality of optoelectronic semiconductor devices, wherein the encapsulation material finishes flush with an underside, facing the auxiliary carrier, of each first contact element, and wherein the encapsulation material finishes flush with an underside, facing the auxiliary carrier, of each second contact element.
1. A method for producing a plurality of optoelectronic semiconductor devices, the method comprising:
applying a plurality of arrangements of electrically conductive first and second contact elements on an auxiliary carrier;
applying an optoelectronic semiconductor chip on the second contact element of each arrangement;
electrically conductively connecting the optoelectronic semiconductor chip to the first contact element for each arrangement;
encapsulating the first contact elements and the second contact elements with an encapsulation material to form an encapsulation body; and
singulating the encapsulation body into a plurality of optoelectronic semiconductor devices,
wherein the encapsulation material finishes flush with an underside, facing the auxiliary carrier, of each first contact element, and
wherein the encapsulation material finishes flush with an underside, facing the auxiliary carrier, of each second contact element.
2. The method according to claim 1 , wherein all side faces of the singulated optoelectronic semiconductor devices are free from the first contact elements and second contact elements.
3. The method according to claim 1 , wherein a plurality of separating frames are attached on the auxiliary carrier before encapsulating the first contact elements and the second contact elements, wherein each separating frame encloses at least one arrangement of the first contact elements and the second contact elements at least in certain places laterally, and wherein side faces of the singulated optoelectronic semiconductor devices comprises certain places by parts of the separating frames.
4. The method according to claim 1 , wherein the encapsulation material covers side faces of each optoelectronic semiconductor chip, at least in certain places.
5. The method according to claim 1 , wherein the auxiliary carrier comprises a metal and the first contact elements and the second contact elements are grown on the auxiliary carrier.
6. The method according to claim 1 , wherein the first contact elements and the second contact elements have undercuts.
7. The method according to claim 1 , wherein the encapsulation material is reflective, and wherein at least an upper side, facing away from the second contact elements, of each optoelectronic semiconductor chip is free from the encapsulation material.
8. The method according to claim 1 , wherein the encapsulation material is configured to appear white.
9. The method according to claim 1 , further comprising, after encapsulating the first contact elements and the second contact elements, applying a converter material on upper sides, facing away from the auxiliary carrier, of the optoelectronic semiconductor chips or on an upper side, facing away from the auxiliary carrier, of the encapsulation material.
10. The method according to claim 1 , wherein the encapsulation material or a converter material cover(s) separating frames on upper sides, facing away from the auxiliary carrier.
11. The method according to claim 1 , further introducing recesses into a converter material in certain places, the recesses extend from an upper side, facing away from the encapsulation material, of the converter material to the encapsulation material or into the encapsulation material, and filling the recesses with encapsulation material.
12. A method for producing a plurality of optoelectronic semiconductor devices, the method comprising:
applying a plurality of arrangements of electrically conductive first and second contact elements on an auxiliary carrier;
applying an optoelectronic semiconductor chip on the second contact element of each arrangement;
electrically conductively connecting the optoelectronic semiconductor chip to the first contact element for each arrangement;
encapsulating the first contact elements and the second contact elements with an encapsulation material to form an encapsulation body; and
singulating the encapsulation body into the plurality of optoelectronic semiconductor devices,
wherein the encapsulation material finishes flush with an underside, facing the auxiliary carrier, of each first contact element,
wherein the encapsulation material finishes flush with an underside, facing the auxiliary carrier, of each second contact element,
wherein a plurality of separating frames are attached to the auxiliary carrier before encapsulating the first contact elements and the second contact elements,
wherein each separating frame encloses at least one arrangement of the first contact elements and the second contact elements at least in certain places laterally,
wherein side faces of the singulated optoelectronic semiconductor devices comprise in certain places parts of the separating frames,
wherein the encapsulation material or a converter material cover(s) the separating frames on upper sides, facing away from the auxiliary carrier, and
wherein the first contact elements and the second contact elements are completely enclosed by the encapsulation material on an underside of the singulated optoelectronic semiconductor devices.