Semiconductor device
View Patent ↗Two or more pads and are connected to a gate region, so that a pad for applying a gate voltage can be selected. In the case where, for example, the peripheral region is likely to overheat, a turn-on voltage is applied to the first pad to turn on the peripheral region later than the central region, and a turn-off voltage is applied to the second pad to turn off the peripheral region earlier than the central region. The problem that the peripheral region is likely to overheat can be addressed. In the case where the flow of an excess current raises the temperature, the turn-off voltage is applied to the second pad. The problem that the temperature is likely to rise in the peripheral region when an excess current flows can be addressed.
1. A semiconductor device comprising:
a substrate;
a first pad fixed on the substrate;
a first gate wiring connected to the first pad;
a second pad fixed on the substrate;
a second gate wiring connected to the second pad;
a plurality of gate regions, each of the gate regions extending on a surface of the substrate and being connected to the first gate wiring and the second gate wiring;
wherein each of the gate regions includes a first point connecting the gate region and the first gate wiring, and a second point connecting the gate region and the second gate wiring, and the first point and the second point are located at different positions on the surface of the substrate.
2. The semiconductor device of claim 1 ;
wherein the first point is located at a central region of the substrate, and the second point is located at a peripheral region of the substrate.
3. A combination of the semiconductor device of claim 1 and a gate voltage adjusting device;
wherein the gate voltage adjusting device comprises a switch applying a turn-on voltage to one of the first and second pads and applying a turn-off voltage to another pad.
4. A combination of the semiconductor device of claim 2 and a gate voltage adjusting device;
wherein the gate voltage adjusting device comprises a switch applying a turn-on voltage to one of the first and second pads and applying a turn-off voltage to another pad.
5. A combination of the semiconductor device of claim 1 and a gate voltage adjusting device;
wherein the gate voltage adjusting device applies a turn-on voltage to the first pad and applies a turn-off voltage to the second pad.
6. A combination of the semiconductor device of claim 1 and a gate voltage adjusting device;
wherein the gate voltage adjusting device comprises a switch changing one of the first pad and the second pad to which a turn-off voltage is applied when an excess current is detected.
7. A combination of the semiconductor device of claim 2 and a gate voltage adjusting device;
wherein the gate voltage adjusting device comprises a switch changing one of the first pad and the second pad to which a turn-off voltage is applied when an excess current is detected.
8. A combination of the semiconductor device of claim 2 and a gate voltage adjusting device;
wherein the gate voltage adjusting device applies a turn-off voltage to the first pad while an excess current is not detected and applies the turn-off voltage to the second pad when the excess current is detected.
9. A combination of the semiconductor device of claim 2 and a gate voltage adjusting device;
wherein the gate voltage adjusting device applies a turn-on voltage and a turn-off voltage to the first pad while an excess current is not detected and applies the turn-off voltage to the second pad when the excess current is detected.
10. A combination of the semiconductor device of claim 2 and a gate voltage adjusting device;
wherein the gate voltage adjusting device applies a turn-on voltage to the second pad and applies a turn-off voltage to the first pad while an excess current is not detected and applies the turn-off voltage to the second pad when the excess current is detected.