Semiconductor device
View Patent ↗A semiconductor device includes a transistor, lead frames, a metal spacer, one surface of which is bonded to the transistor by a first bonding material and the other surface of which is bonded to the lead frame by a second bonding material, and a plastic mold. The plastic mold packages the transistor and the metal spacer. One surface of each of the lead frames is attached to the plastic mold. Strength of the second bonding material is lower than strength of the first bonding material. According to the above configuration, when stress is repeatedly applied to the semiconductor device, a crack occurs earlier in the second bonding material than in the first bonding material. The stress is buffered at the first bonding material.
1. A semiconductor device comprising:
a semiconductor element;
a lead frame;
a metal spacer provided between the semiconductor element and the lead frame; and
a plastic mold packaging the semiconductor element and the metal spacer, and attached to one surface of the lead frame,
wherein the metal spacer and the semiconductor element are bonded by a first bonding material, and the metal spacer and the lead frame are bonded by a second bonding material, and
strength of the second bonding material is lower than strength of the first bonding material.
2. The semiconductor device according to claim 1 , wherein the strength is determined by a lifetime prediction based on a predetermined criterion.
3. The semiconductor device according to claim 1 , wherein the strength is determined by a yield stress or a 0.2% proof stress.
4. The semiconductor device according to claim 1 , wherein
lead frames are fixed on both sides of the plastic mold, respectively, and
the metal spacer and at least one of the lead frames are bonded by the second bonding material.
5. The semiconductor device according to claim 4 , wherein
another metal spacer and the other of the lead frames are bonded by the second bonding material, and
the other metal spacer and the semiconductor element are bonded by the first bonding material.
6. The semiconductor device according to claim 1 , wherein
the second bonding material is a Sn—Cu solder material.
7. The semiconductor device according to claim 1 , wherein
the first bonding material is selected from the group consisting of a Sn—Sb solder material, a Zn—Al solder material, nickel nanoparticles, and silver nanoparticles.
8. The semiconductor device according to claim 1 , wherein
the semiconductor element and the metal spacer are bonded by diffusion bonding that uses an insert material as the first bonding material.