Method for manufacturing image capturing device and image capturing device
An offset spacer film (OSS) is formed on a side wall surface of a gate electrode (NLGE, PLGE) to cover a region in which a photo diode (PD) is disposed. Next, an extension region (LNLD, LPLD) is formed using the offset spacer film and the like as an implantation mask. Next, process is provided to remove the offset spacer film covering the region in which the photo diode is disposed. Next, a sidewall insulating film (SWI) is formed on the side wall surface of the gate electrode. Next, a source-drain region (HPDF, LPDF, HNDF, LNDF) is formed using the sidewall insulating film and the like as an implantation mask.
1. A method for manufacturing an image capturing device having a photoelectric conversion unit, a transfer transistor, and a first peripheral transistor, said transfer transistor transferring a charge generated in said photoelectric conversion unit, said first peripheral transistor processing said charge as a signal, the method comprising the steps of:
defining an element formation region by forming an element isolation insulating film in a semiconductor substrate, said element formation region including a pixel region and a first peripheral region, said photoelectric conversion unit and said transfer transistor being formed in said pixel region, said first peripheral transistor being formed in said first peripheral region;
forming gate electrodes, the step of forming said gate electrodes including the step of forming a transfer gate electrode of said transfer transistor in said pixel region and forming a first peripheral gate electrode of said first peripheral transistor in said first peripheral region;
forming the photoelectric conversion unit at a portion of said pixel region on one side relative to said transfer gate electrode;
forming a first insulating film to serve as an offset spacer film so as to cover said element formation region and said gate electrodes;
forming said offset spacer film on each of side wall surfaces of said gate electrodes by providing anisotropic etching process to said first insulating film while a portion of said first insulating film covering said photoelectric conversion unit remains;
removing the portion of said first insulating film covering said photoelectric conversion unit by providing wet etching process; and
forming a sidewall insulating film on each of the side wall surfaces of said gate electrodes after the portion of said first insulating film is removed.
2. The method for manufacturing the image capturing device according to claim 1 , wherein the step of removing the portion of said first insulating film covering said photoelectric conversion unit includes the step of removing said first insulating film remaining, by providing wet etching process to an entire surface of said semiconductor substrate.
3. The method for manufacturing the image capturing device according to claim 1 , wherein
the step of removing the portion of said first insulating film covering said photoelectric conversion unit includes the steps of
forming a resist pattern to expose a portion of said first insulating film covering said photoelectric conversion unit and cover the other portions, and
removing the exposed portion of said first insulating film by providing wet etching process using said resist pattern as a mask.
4. The method for manufacturing the image capturing device according to claim 1 , wherein
the step of defining said element formation region includes the steps of
defining a second peripheral region in which a second peripheral transistor is formed, and
defining, as said pixel region, a first pixel region, a second pixel region, and a third pixel region respectively corresponding to red, green and blue,
the step of forming said photoelectric conversion unit includes the step of forming, as said photoelectric conversion unit, a first photoelectric conversion unit in said first pixel region, a second photoelectric conversion unit in said second pixel region, and a third photoelectric conversion unit in said third pixel region,
the method comprising the steps of:
forming a silicidation blocking film to cover said pixel region including said first photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit, said first peripheral region, and said second peripheral region;
removing a portion of said silicidation blocking film covering said first peripheral transistor by providing predetermined processing to said silicidation blocking film while a portion of said silicidation blocking film covering said second peripheral transistor remains; and
forming a metal silicide film for said first peripheral transistor, wherein
in the step of providing the predetermined processing to said silicidation blocking film, a portion of said silicidation blocking film covering at least one of said first photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit remains.
5. The method for manufacturing the image capturing device according to claim 4 , wherein
in the step of providing the predetermined processing to said silicidation blocking film, said silicidation blocking film is formed such that portions of said silicidation blocking film covering two of said first photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit remain, and said silicidation blocking film remaining on one of the two of said first photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit has a film thickness different from a film thickness of said silicidation blocking film remaining on the other of the two of said first photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit.
6. The method for manufacturing the image capturing device according to claim 1 , wherein
said sidewall insulating film formed in the step of forming said sidewall insulating film is constituted of at least two layers, and
when said offset spacer film formed on each of the side wall surfaces of said gate electrodes is removed before the step of forming said sidewall insulating film, in the step of forming said sidewall insulating film, a sidewall insulating film constituted of three layers is formed as said sidewall insulating film on each of the side wall surfaces of said gate electrodes from which said offset spacer film has been removed,
the method comprising the step of forming a source-drain region by implanting an impurity of a predetermined conductivity type using said gate electrodes and said sidewall insulating film as an implantation mask.
7. The method for manufacturing the image capturing device according to claim 6 , comprising the step of removing a third one of the three layers of said sidewall insulating film by providing wet etching process after forming said source-drain region.
8. A method for manufacturing an image capturing device having a photoelectric conversion unit, a transfer transistor, and a first peripheral transistor, said transfer transistor transferring a charge generated in said photoelectric conversion unit, said first peripheral transistor processing said charge as a signal, the method comprising the steps of:
defining an element formation region by forming an element isolation insulating film in a semiconductor substrate, said element formation region including a pixel region and a first peripheral region, said photoelectric conversion unit and said transfer transistor being formed in said pixel region, said first peripheral transistor being formed in said first peripheral region;
forming gate electrodes, the step of forming said gate electrodes including the step of forming a transfer gate electrode of said transfer transistor in said pixel region and forming a first peripheral gate electrode of said first peripheral transistor in said first peripheral region;
forming the photoelectric conversion unit at a portion of said pixel region on one side relative to said transfer gate electrode;
forming a first insulating film to serve as an offset spacer film so as to cover said element formation region and said gate electrodes;
forming said offset spacer film on each of side wall surfaces of said gate electrodes by providing anisotropic etching process to said first insulating film while a portion of said first insulating film covering said photoelectric conversion unit remains;
forming a second insulating film to serve as a sidewall insulating film so as to cover a portion of said first insulating film covering said photoelectric conversion unit and cover said offset spacer film formed on each of the side wall surfaces of said gate electrodes; and
forming said sidewall insulating film on each of the side wall surfaces of said gate electrodes by providing anisotropic etching to said second insulating film while the portion of said second insulating film covering said photoelectric conversion unit remains.
9. The method for manufacturing the image capturing device according to claim 8 , wherein
the step of defining said element formation region includes the steps of
defining a second peripheral region in which a second peripheral transistor is formed, and
defining, as said pixel region, a first pixel region, a second pixel region, and a third pixel region respectively corresponding to red, green and blue,
the step of forming said photoelectric conversion unit including the step of forming, as said photoelectric conversion unit, a first photoelectric conversion unit in said first pixel region, a second photoelectric conversion unit in said second pixel region, and a third photoelectric conversion unit in said third pixel region,
the method comprising the steps of:
forming a silicidation blocking film to cover said pixel region including said first photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit, said first peripheral region, and said second peripheral region;
removing a portion of said silicidation blocking film covering said first peripheral transistor by providing predetermined processing to said silicidation blocking film while a portion of said silicidation blocking film covering said second peripheral transistor remains; and
forming a metal silicide film for said first peripheral transistor, wherein
in the step of providing the predetermined processing to said silicidation blocking film, a portion of said silicidation blocking film covering at least one of said first photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit remains.
10. The method for manufacturing the image capturing device according to claim 8 , wherein
in the step of providing the predetermined processing to said silicidation blocking film, said silicidation blocking film is formed such that portions of said silicidation blocking film covering two of said first photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit remain, and said silicidation blocking film remaining on one of the two of said first photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit has a film thickness different from a film thickness of said silicidation blocking film remaining on the other of the two of said first photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit.
11. An image capturing device having a photoelectric conversion unit, a transfer transistor, and a first peripheral transistor, said transfer transistor transferring a charge generated in said photoelectric conversion unit, said first peripheral transistor processing said charge as a signal, the image capturing device comprising:
an element formation region, said element formation region being defined by an element isolation insulating film formed in a semiconductor substrate, said element formation region including a pixel region and a first peripheral region;
gate electrodes formed in said element formation region, said gate electrodes including a transfer gate electrode of said transfer transistor formed in said pixel region and a first peripheral gate electrode of said first peripheral transistor formed in said first peripheral region;
a photoelectric conversion unit formed at a portion of said pixel region on one side relative to said transfer gate electrode;
a floating diffusion region formed at a portion of said pixel region on the other side relative to said transfer gate electrode;
an offset spacer film formed on each of side wall surfaces of said gate electrodes to exclude a region in which said photoelectric conversion unit is disposed; and
a sidewall insulating film formed on each of the side wall surfaces of said gate electrodes to cover said offset spacer film,
said offset spacer film being not formed on a side wall surface of said transfer gate electrode on a side on which said photoelectric conversion unit is disposed, said offset spacer film being formed on a side wall surface of said transfer gate electrode on a side on which said floating diffusion region is disposed,
said element formation region including:
a second peripheral region in which a second peripheral transistor is formed, and
a first pixel region, a second pixel region, and a third pixel region each defined as said pixel region and respectively corresponding to red, green and blue,
said photoelectric conversion unit including:
a first photoelectric conversion unit formed in said first pixel region,
a second photoelectric conversion unit formed in said second pixel region, and
a third photoelectric conversion unit formed in said third pixel region,
the image capturing device further comprising:
a silicidation blocking film formed not to cover said first peripheral transistor and formed to cover said second peripheral transistor; and
a metal silicide film not formed for said second peripheral transistor and formed for said first peripheral transistor,
wherein said silicidation blocking film is formed to cover at least one of said photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit.
12. The image capturing device according to claim 11 , wherein
said silicidation blocking film is formed to cover two of said first photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit, and
said silicidation blocking film remaining on one of the two of said first photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit has a film thickness different from a film thickness of said silicidation blocking film remaining on the other of the two of said first photoelectric conversion unit, said second photoelectric conversion unit, and said third photoelectric conversion unit.