Semiconductor structure having nanocrystalline core and nanocrystalline shell paring with compositional transition layer

1. A semiconductor structure, comprising:

a nanocrystalline core comprising a first semiconductor material;

a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core;

a first compositional transition layer disposed between, and in contact with, the nanocrystalline core and nanocrystalline shell, the first compositional transition layer having a composition intermediate to the first and second semiconductor materials;

a nanocrystalline outer shell at least partially surrounding the nanocrystalline shell, the nanocrystalline outer shell comprising a third semiconductor material different from the first and second semiconductor materials;

a second compositional transition layer disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell, the second compositional transition layer having a composition intermediate to the second and third semiconductor materials; and

an insulator coating surrounding and encapsulating the nanocrystalline core/nanocrystalline shell/nanocrystalline outer shell structure.

2. The semiconductor structure of claim 1 , wherein the first compositional transition layer is an alloyed layer comprising a mixture of the first and second semiconductor materials.

3. The semiconductor structure of claim 1 , wherein the first compositional transition layer is a graded layer comprising a compositional gradient of the first semiconductor material proximate to the nanocrystalline core through to the second semiconductor material proximate to the nanocrystalline shell.

4. The semiconductor structure of claim 1 , wherein the first compositional transition layer has a thickness approximately in the range of 1.5-2 monolayers.

5. The semiconductor structure of claim 1 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is cadmium sulfide (CdS), and the first compositional transition layer comprises CdSe x S y , where 0<x<1 and 0<y<1.

6. The semiconductor structure of claim 1 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is zinc selenide (ZnSe), and the first compositional transition layer comprises Cd x Zn y Se, where 0<x<1 and 0<y<1.

7. The semiconductor structure of claim 1 , wherein the first compositional transition layer passivates or reduces trap states where the nanocrystalline shell surrounds the nanocrystalline core.

8. The semiconductor structure of claim 1 , wherein the second compositional transition layer is an alloyed layer comprising a mixture of the second and third semiconductor materials.

9. The semiconductor structure of claim 1 , wherein the second compositional transition layer is a graded layer comprising a compositional gradient of the second semiconductor material proximate to the nanocrystalline shell through to the third semiconductor material proximate to the nanocrystalline outer shell.

10. The semiconductor structure of claim 1 , wherein the second compositional transition layer has a thickness approximately in the range of 1.5-2 monolayers.

11. The semiconductor structure of claim 1 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is cadmium sulfide (CdS), the third semiconductor material is zinc sulfide (ZnS), and the second compositional transition layer comprises Cd x Zn y S, where 0<x<1 and 0<y<1.

12. The semiconductor structure of claim 1 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is zinc selenide (ZnSe), the third semiconductor material is zinc sulfide (ZnS), and the second compositional transition layer comprises ZnSe x S y , where 0<x<1 and 0<y<1.

13. The semiconductor structure of claim 1 , wherein the second compositional transition layer passivates or reduces trap states where the nanocrystalline outer shell surrounds the nanocrystalline shell.

14. The semiconductor structure of claim 1 , wherein the nanocrystalline core is an anisotropic nanocrystalline core having an aspect ratio between, but not including, 1.0 and 2.0.

15. The semiconductor structure of claim 14 , wherein the nanocrystalline shell is an anisotropic nanocrystalline shell having an aspect ratio approximately in the range of 4-6.

16. The semiconductor structure of claim 14 , wherein the aspect ratio of the anisotropic nanocrystalline core is approximately in the range of 1.01-1.2.

17. The semiconductor structure of claim 1 , wherein the insulator coating comprises an amorphous material selected from the group consisting of silicon dioxide (SiO 2 ), silicon oxide (SiO x ), aluminum oxide (Al 2 O 3 ), zirconia (ZrO x ), titania (TiO x ), and hafnia (HfO x ).

18. The semiconductor structure of claim 1 , wherein the nanocrystalline shell completely surrounds the nanocrystalline core.

19. The semiconductor structure of claim 1 , wherein the nanocrystalline shell only partially surrounds the nanocrystalline core, exposing a portion of the nanocrystalline core.

20. The semiconductor structure of claim 1 , wherein the nanocrystalline core is disposed in an asymmetric orientation with respect to the nanocrystalline shell.

21. The semiconductor structure of claim 1 , wherein the semiconductor structure is a quantum dot.

22. The semiconductor structure of claim 21 , wherein the quantum dot is a down-converting quantum dot.

23. The semiconductor structure of claim 21 , wherein the quantum dot is an up-shifting quantum dot.