Sputtering target with optimized performance characteristics
View Patent ↗The invention relates to a sputtering target containing a sputtering material containing a metal oxide. The sputtering material contains zirconium and titanium as metals and contains at least one mixed oxide phase.
1. A sputtering target comprising a sputtering material comprising a metal oxide, wherein the metal oxide comprises zirconium and titanium as a metal fraction, and contains at least 30 wt % of at least one mixed oxide phase, and wherein a fraction of zirconium in the metal fraction is 20 to 30 wt %.
2. The sputtering target according to claim 1 , wherein the fraction of the mixed oxide phase in the sputtering material is at least 95 wt.-%, based on the total weight of the sputtering material.
3. The sputtering target according to claim 1 , wherein the metal oxide comprises zirconium dioxide phases, and wherein a fraction of the zirconium dioxide phases is at most 5 wt.-%, based on the total weight of the sputtering material.
4. The sputtering target according to claim 1 , wherein the sputtering material has an oxygen deficit relative to a stoichiometric composition.
5. The sputtering target of claim 1 , wherein the sputtering material contains at least 50 wt % of the at least one mixed oxide phase.
6. The sputtering target of claim 1 , wherein the sputtering material contains at least 70 wt % of the at least one mixed oxide phase.
7. The sputtering target of claim 1 , wherein the metal fraction further comprises yttrium, calcium, or hafnium.
8. The sputtering target of claim 1 , wherein the sputtering target comprises a stainless steel tube and a layer of the sputtering material thereon.
9. A sputtering target comprising:
a support structure; and
a sputtering material deposited on the support structure;
wherein the sputtering material comprises a metal oxide and at least 95 wt % of at least one mixed oxide phase;
wherein the metal oxide comprises zirconium and titanium, and a fraction of zirconium in the metal oxide is 20 to 30 wt %.