Conductive substrate and method for manufacturing same
An exemplary embodiment of the present invention comprises: 1) forming a crystalline transparent conducting layer on a substrate; 2) forming an amorphous transparent conducting layer on the crystalline transparent conducting layer; 3) forming at least one pattern open region so as to expose a part of the crystalline transparent conducting layer by patterning the amorphous transparent conducting layer; and 4) forming a metal layer in the at least one pattern open region.
1. A conducting substrate, comprising:
a substrate;
a first crystalline transparent conducting layer provided on the substrate; and
a second amorphous transparent conducting layer provided on the first transparent conducting layer,
wherein the second transparent conducting layer comprises a metal pattern therein,
wherein the second transparent conducting layer comprises a second transparent conducting pattern and at least one pattern open region, and
the metal pattern is provided in the at least one pattern open region.
2. The conducting substrate of claim 1 , wherein the first transparent conducting layer and the second transparent conducting layer are provided to contact each other, and
composition materials of both surfaces where the first transparent conducting layer and the second transparent conducting layer contact each other are the same as each other.
3. The conducting substrate of claim 1 , wherein the first transparent conducting layer and the second transparent conducting layer are provided to contact each other, and
a grain structure observed from the viewpoint of the surfaces where the first transparent conducting layer and the second transparent conducting layer contact each other has a form in which an upper part and a lower part contact each other with a boundary in a structure having a pillar shape in which upper and lower widths are different from each other.
4. The conducting substrate of claim 1 , wherein the thickness of the metal pattern is smaller than that of the second transparent conducting layer.
5. The conducting substrate of claim 1 , wherein the thickness of the metal pattern is 80 to 120% of the thickness of the second transparent conducting layer.
6. The conducting substrate of claim 1 , wherein an upper area of the metal pattern is 20% or more and less than 100% of an upper area of the pattern open region.
7. The conducting substrate of claim 1 , wherein when the thickness of the second transparent conducting layer is set as D and the height of the top is set as 0, a position D2 of the top of the metal pattern satisfies Equation 1 below:
−0.2 D<D 2<0.2 D. [Equation 1]
8. The conducting substrate of claim 1 , wherein when the thickness of the second transparent conducting layer is set as D and the height of the top is set as 0, a position D2 of the top of the metal pattern satisfies Equation 2 below;
−0.8 D<D 2< D. [Equation 2]
9. The conducting substrate of claim 1 , wherein the first transparent conducting layer and the second transparent conducting layer comprise one or more selected from the group consisting of indium oxide, zinc oxide, indium tin oxide, indium zinc oxide, and a transparent conducting polymer.
10. The conducting substrate of claim 1 , wherein the metal layer comprises one or more selected from the group consisting of aluminum, copper, neodymium, molybdenum, and an alloy thereof.
11. The conducting substrate of claim 1 , wherein the top of the first transparent conducting layer contacts the bottom of the metal pattern.
12. The conducting substrate of claim 1 , wherein an interface between the metal pattern and the second transparent conducting layer is vertical to the first transparent conducting layer.
13. The conducting substrate of claim 1 , wherein the height/the width of the metal pattern is equal to or less than 1.
14. The conducting substrate of claim 1 , further comprising:
a metal oxide pattern, a metal nitride pattern, or a metal oxynitride pattern on the metal pattern.
15. The conducting substrate of claim 14 , wherein the metal oxide pattern is provided on the top of the metal pattern and the side of the metal pattern exposed on the second transparent conducting layer.
16. The conducting substrate of claim 14 , wherein the metal pattern and the metal oxide pattern, the metal nitride pattern or the metal oxynitride pattern comprise the same metal.
17. The conducting substrate of claim 1 , wherein at least one surface of the metal pattern does not contact the first transparent conducting layer and the second transparent conducting layer, and
the metal oxide pattern, the metal nitride pattern or the metal oxynitride pattern are additionally comprised on at least one surface of the metal pattern, which does not contact the first transparent conducting layer and the second transparent conducting layer.
18. A privacy film comprising the conducting substrate of claim 1 .
19. An electronic device comprising the conducting substrate of claim 1 .
20. The electronic device of claim 19 , wherein the electronic device is an organic light emitting device, an organic light emitting device illumination, or an organic solar cell.
21. The conducting substrate of claim 1 , wherein an upper area of the metal pattern is 80% or more and less than 100% of the upper area of the pattern open region.
22. The conducting substrate of claim 1 , wherein the height/the width of the metal pattern is ⅓ to 1.
23. The conducting substrate of claim 1 , wherein the metal pattern is present exclusively in the second transparent conducting layer.