Optoelectronic device

1. An optoelectronic device having a functional layer stack, an encapsulation layer provided for encapsulating the layer stack, a first insulating structure, a second insulating structure and at least one metal layer, wherein

the functional layer stack comprises at least one organic active layer, which emits electromagnetic radiation when the device is in operation,

the encapsulation layer completely covers the at least one organic active layer when viewed in plan view onto the layer stack,

the metal layer is arranged on a side of the encapsulation layer remote from the layer stack,

the second insulating structure is spaced laterally from the first insulating structure, and

the layer stack extends between the first insulating structure and the second insulating structure.

2. The optoelectronic device according to claim 1 , wherein

the encapsulation layer is a thin-film encapsulation, wherein the thin-film encapsulation has a thickness which is less than or equal to 1 μm,

the metal layer has a thickness which is at least twice as great as the thickness of the encapsulation layer,

the metal layer covers at least 75% of an outer surface of the encapsulation layer remote from the layer stack.

3. The optoelectronic device according to claim 1 , wherein the metal layer has a thickness which is between 0.5 millimeters and 3 millimeters inclusive.

4. The optoelectronic device according to claim 1 , wherein the metal layer is arranged directly on the encapsulation layer.

5. The optoelectronic device according to claim 1 , comprising a carrier body, wherein

the functional layer stack is arranged on the carrier body; and

the carrier body comprises a radiation exit face of the device on a side remote from the layer stack.

6. The optoelectronic device according to claim 5 , comprising a first electrode and a second electrode for electrical contacting of the layer stack, wherein the layer stack is arranged at least in places between the first electrode and second electrode.

7. The optoelectronic device according to claim 6 , wherein the first electrode comprises a first contact track and the second electrode comprises a second contact track, wherein the first contact track and the second contact track are arranged on the carrier body of the device and spaced laterally from one another.

8. The optoelectronic device according to claim 7 , wherein the first contact track and the second contact track are arranged directly on the carrier body of the device and do not overlap with the organic active layer at all when viewed in plan view onto the encapsulation layer.

9. The optoelectronic device according to claim 8 , wherein the metal layer comprises a first sub-region and a second sub-region, wherein the first sub-region is electrically connected with the first electrode via the first contact track and the second sub-region is electrically connected with the second electrode via the second contact track.

10. The optoelectronic device according to claim 6 , wherein the metal layer is electrically connected with the first electrode.

11. The optoelectronic device according to claim 6 , wherein the metal layer comprises a first sub-region and a second sub-region spaced laterally from the first sub-region, wherein

the first sub-region of the metal layer is electrically connected with the first electrode; and

the second sub-region of the metal layer is electrically connected with the second electrode.

12. The optoelectronic device according to claim 11 , wherein the device is of surface-mountable construction and electrical contacting of the device proceeds at a backside via the first sub-region and via the second sub-region.

13. The optoelectronic device according to claim 1 , wherein the metal layer has a thickness which is at least twice as great as the thickness of the encapsulation layer.

14. The optoelectronic device according to claim 1 , wherein the encapsulation layer is a thin-film encapsulation, wherein the thin-film encapsulation contains a plurality of inorganic layers.

15. The optoelectronic device according to claim 14 , wherein the thin-film encapsulation has a thickness which is less than or equal to 1 micrometer.

16. The optoelectronic device according to claim 1 , wherein on a side of the encapsulation layer remote from the active layer the device is free of a body which contains glass or consists of glass.

17. An optoelectronic device having a radiation-transmissive carrier body, a functional layer stack, a radiation-transmissive first electrode arranged between the radiation-transmissive carrier body and the functional layer stack, an encapsulation layer provided for encapsulating the layer stack and at least one metal layer,

wherein

the functional layer stack comprises at least one organic active layer, which emits electromagnetic radiation when the device is in operation;

the encapsulation layer completely covers the at least one organic active layer when viewed in plan view onto the layer stack;

the metal layer has a thickness of between 0.5 mm and 3 mm inclusive, and

the metal layer is arranged on a side of the encapsulation layer remote from the layer stack, wherein the metal layer is electrically connected to the radiation-transmissive first electrode and in plan view onto the carrier body, the metal layer completely covers the encapsulation layer.

18. The optoelectronic device according to claim 17 , wherein

the encapsulation layer is a thin-film encapsulation comprising a plurality of inorganic layers and having a thickness which is less than or equal to 1 μm, and

on a side of the thin-film encapsulation remote from the active layer the device is free of a body which contains glass or consists of glass.

19. The optoelectronic device according to claim 17 , comprising a first insulating structure and a second insulating structure spaced laterally from the first insulating structure, wherein the layer stack extends between the first insulating structure and the second insulating structure.

20. An optoelectronic device having a functional layer stack, a first electrode and a second electrode for electrical contacting of the layer stack, an encapsulation layer provided for encapsulating the layer stack, a carrier body and at least one metal layer, wherein

the functional layer stack comprises at least one organic active layer, which emits electromagnetic radiation when the device is in operation,

the encapsulation layer completely covers the at least one organic active layer when viewed in plan view onto the layer stack,

the metal layer is arranged on a side of the encapsulation layer remote from the layer stack,

the functional layer stack is arranged on the carrier body,

the carrier body comprises a radiation exit face of the device on a side remote from the layer stack,

the layer stack is arranged at least in places between the first electrode and second electrode, and

the optoelectronic device further comprises one additional feature of the group consisting of additional features i and ii, namely:

i. the metal layer is electrically connected with the first electrode, and

ii. the first electrode comprises a first contact track and the second electrode comprises a second contact track, wherein the first contact track and the second contact track are arranged on the carrier body of the device and spaced laterally from one another.