Optoelectronic integrated circuitry for transmitting and/or receiving wavelength-division multiplexed optical signals
View Patent ↗A WDM transmitter and/or receiver optoelectronic integrated circuit includes a plurality of microresonators and corresponding waveguides and couplers that are integrally formed on a substrate. For the WDM transmitter, the microresonators and waveguides are configured to generate a plurality of optical signals at different wavelengths. Each coupler includes a resonant cavity waveguide that is configured to transmit one optical signal from one waveguide to the output waveguide such that the plurality of optical signals are multiplexed on the output waveguide. For the WDM receiver, an input waveguide is configured to provide for propagation of a plurality of optical signals at different wavelengths. Each coupler includes a resonant cavity waveguide that is configured to transmit at least one optical signal from the input waveguide to one waveguide. The waveguides and microresonators are configured to perform optical-to-electrical conversion of the plurality of optical signals at different wavelengths that propagate in the waveguides.
1. An optoelectronic integrated circuit comprising:
a substrate;
a plurality of microresonators and a plurality of waveguides that are integrally formed on the substrate, wherein each microresonator is adjacent to a corresponding waveguide of the plurality of waveguides and is configured to generate an optical signal of a plurality of optical signals, wherein the plurality of microresonators generate the plurality of optical signals at different wavelengths, and wherein each waveguide of the plurality of waveguides is configured to propagate a corresponding optical signal of the plurality of optical signals;
an output waveguide integrally formed on the substrate; and
a plurality of couplers integrally formed on the substrate, wherein each coupler of the plurality of couplers is adjacent to a waveguide of the plurality of waveguides, wherein each coupler includes a corresponding resonant cavity waveguide of the plurality of resonant cavity waveguides, wherein each resonant cavity waveguide of the plurality of resonant cavity waveguides is disposed between a corresponding waveguide of the plurality of waveguides and the output waveguide, and is configured to transmit a corresponding optical signal of the plurality of optical signals from the corresponding waveguide to the output waveguide such that the plurality of the optical signals are multiplexed on the output waveguide, and wherein each resonant cavity waveguide is configured as an active device with corresponding anode and cathode terminals to receive corresponding electrical bias signals, absorb the corresponding optical signal, and generate a corresponding photocurrent that causes a shift in a corresponding effective resonant wavelength such that the corresponding effective resonant wavelength matches a wavelength of the corresponding optical signal.
2. An optoelectronic integrated circuit of claim 1 , wherein each resonant cavity waveguide supports in-plane propagation of a corresponding optical mode at a particular wavelength.
3. The optoelectronic integrated circuit of claim 1 , wherein a plurality of bias circuits are configured to apply a forward bias between the corresponding anode and cathode terminals by supplying the corresponding electrical bias signals to the anode and cathode terminals, thereby causing the shift in the corresponding effective resonant wavelengths.
4. An optoelectronic integrated circuit of claim 3 , wherein the corresponding photocurrent flows to the corresponding anode terminal.
5. The optoelectronic integrated circuit of claim 1 , wherein each microresonator of the plurality of microresonators is configured as a closed-loop resonator.
6. The optoelectronic integrated circuit of claim 1 , wherein each microresonator of the plurality of microresonators is configured as a closed-loop resonator with a reflector structure integral to the corresponding waveguide, wherein the reflector structure includes a Bragg grating.
7. An optoelectronic integrated circuit of claim 6 , wherein the reflector structure includes two co-planer radio-frequency (RF) traveling wave transmission lines disposed on opposite sides of the Bragg-grating along a length of the Bragg grating.
8. An optoelectronic integrated circuit of claim 7 , further comprising a signal source that supplies a traveling wave RF signal to the co-planer RF traveling wave transmission lines in order to selectively control a wavelength of an optical signal that is reflected by the Bragg grating.
9. An optoelectronic integrated circuit of claim 6 , wherein:
the reflector structures, the closed-loop resonators, the plurality of waveguides, the plurality of couplers, and the output waveguide are all fabricated in an epitaxial layer structure formed on the substrate, wherein the epitaxial layer structure includes at least one modulation doped quantum well structure with at least one quantum well; and
the Bragg grating is formed in the epitaxial layer structure and is disposed above the at least one modulation doped quantum well structure.