Extremely low resistance composition and methods for creating same
The invention pertains to creating new extremely low resistance (“ELR”) materials, which may include high temperature superconducting (“HTS”) materials. In some implementations of the invention, an ELR material may be modified by depositing a layer of modifying material unto the ELR material to form a modified ELR material. The modified ELR material has improved operational characteristics over the ELR material alone. Such operational characteristics may include operating at increased temperatures or carrying additional electrical charge or other operational characteristics. In some implementations of the invention, the ELR material is a cuprate-perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.
1. A composition comprising:
a first layer comprising an HTS perovskite material; and
a second layer comprising a modifying material, wherein the modifying material of the second layer is bonded to a face of the HTS perovskite material of the first layer, wherein the face is substantially perpendicular to an a-axis or a b-axis of the HTS perovskite material, wherein the modifying material comprises an element selected from the group consisting of: chromium, rhodium, beryllium, gallium, selenium, and vanadium.
2. The composition of claim 1 , wherein the composition has improved operating characteristics over those of the HTS perovskite material.
3. The composition of claim 2 , wherein the composition operates at a higher temperature than that of the HTS perovskite material.
4. The composition of claim 3 , wherein the composition demonstrates extremely low resistance at a higher temperature than that of the HTS perovskite material.
5. The composition of claim 3 , wherein the composition transitions from a non-ELR state to a ELR state at a temperature higher than that of the HTS perovskite material.
6. The composition of claim 1 , wherein the HTS perovskite material is YBCO.
7. The composition of claim 1 , wherein the modifying material of the second layer is bonded to a face of the HTS perovskite material of the first layer, wherein the face is substantially perpendicular to a b-axis of the HTS perovskite material.
8. The composition of claim 1 , wherein the modifying material of the second layer is bonded to a face of the HTS perovskite material of the first layer, wherein the face is substantially perpendicular to an a-axis of the HTS perovskite material.
9. The composition of claim 1 , wherein the modifying material of the second layer is bonded to a face of the HTS perovskite material of the first layer, wherein the face is substantially parallel to the c-axis.
10. The composition of claim 1 , wherein the composition has a transition temperature greater than that of the HTS perovskite material.
11. The composition of claim 1 , wherein the composition carries a greater amount of current in an ELR state than that carried by the HTS perovskite material in its ELR state.
12. A method comprising:
bonding a modifying material to a face of a HTS perovskite material, wherein the face of the HTS perovskite material is substantially perpendicular to an a-axis or a b-axis of the HTS perovskite material, wherein the modifying material comprises an element selected from the group consisting of: chromium, rhodium, beryllium, gallium, selenium, and vanadium.
13. The method of claim 12 , wherein bonding a modifying material to a face of HTS perovskite material comprises depositing the modifying material onto the HTS perovskite material.
14. The method of claim 12 , wherein bonding a modifying material to a face of HTS perovskite material comprises forming the HTS perovskite material onto the modifying material.
15. A composition comprising:
a first layer comprising an HTS perovskite material material;
a second layer comprising a modifying material, wherein the second layer is bonded to a face of the first layer, wherein the face of the HTS perovskite material is substantially perpendicular to an a-axis or a b-axis of the HTS perovskite material;
a third layer comprising the HTS perovskite material; and
a fourth layer of the modifying material, wherein the fourth layer is bonded to the third layer.
16. The composition of claim 15 , wherein the fourth layer is bonded to a face of the HTS perovskite material of the third layer, wherein the face of the HTS perovskite material of the third layer is substantially perpendicular to the a-axis or the b-axis of the HTS perovskite material.
17. The composition of claim 15 , wherein the HTS perovskite material is YBCO.