Semiconductor device and method for manufacturing thereof
A transistor that is formed using an oxide semiconductor film is provided. A transistor that is formed using an oxide semiconductor film with reduced oxygen vacancies is provided. A transistor having excellent electrical characteristics is provided. A semiconductor device includes a first insulating film, a first oxide semiconductor film, a gate insulating film, and a gate electrode. The first insulating film includes a first region and a second region. The first region is a region that transmits less oxygen than the second region does. The first oxide semiconductor film is provided at least over the second region.
1. A semiconductor device comprising:
a base insulating film over a substrate;
a first insulating film over the base insulating film;
a first oxide semiconductor film having an island shape over the first insulating film;
a gate insulating film over the first oxide semiconductor film; and
a gate electrode over the gate insulating film,
wherein each of the base insulating film and the first insulating film comprises a first region and a second region,
wherein the first region is a region that transmits less oxygen than the second region does,
wherein the first oxide semiconductor film and the second region overlap with each other,
wherein part of the first oxide semiconductor film comprises a high resistance region and a low resistance region,
wherein the high resistance region and the gate electrode overlap with each other, and
wherein the first region contains phosphorus or boron.
2. The semiconductor device according to claim 1 , wherein the second region overlaps with the gate electrode.
3. The semiconductor device according to claim 1 , wherein the low resistance region contains one of phosphorus and boron.
4. The semiconductor device according to claim 1 , wherein the first insulating film contains oxygen that is released by heating.
5. The semiconductor device according to claim 1 , wherein the first insulating film has a greater thickness than the gate insulating film.
6. The semiconductor device according to claim 1 , further comprising a second oxide semiconductor film between the first insulating film and the first oxide semiconductor film,
wherein the sum of thicknesses of the second oxide semiconductor film and the first insulating film is greater than a thickness of the gate insulating film.
7. A semiconductor device comprising:
a base insulating film over a substrate;
a first insulating film over the base insulating film;
a first oxide semiconductor film having an island shape over the first insulating film;
a second insulating film over the first oxide semiconductor film;
a gate electrode over the second insulating film; and
a third insulating film over the first oxide semiconductor film and the gate electrode,
wherein each of the base insulating film and the first insulating film comprises a first region and a second region,
wherein the first region is a region that transmits less oxygen than the second region does,
wherein the first oxide semiconductor film and the second region overlap with each other,
wherein part of the first oxide semiconductor film comprises a high resistance region and a low resistance region,
wherein the high resistance region and the gate electrode overlap with each other,
wherein the third insulating film is in contact with the first insulating film and the second insulating film, and
wherein the first region contains phosphorus or boron.
8. The semiconductor device according to claim 7 , wherein the third insulating film is a film through which oxygen does not readily pass.
9. The semiconductor device according to claim 7 , wherein the third insulating film is an aluminum oxide film.
10. The semiconductor device according to claim 7 , wherein the first insulating film contains oxygen that is released by heating.
11. The semiconductor device according to claim 7 , wherein the first insulating film has a greater thickness than the second insulating film.
12. The semiconductor device according to claim 7 , further comprising a second oxide semiconductor film between the first insulating film and the first oxide semiconductor film,
wherein the sum of thicknesses of the second oxide semiconductor film and the first insulating film is greater than a thickness of the second insulating film.