Image sensor and method for fabricating the same

1. An image sensor, comprising:

a substrate including a photoelectric conversion region;

an interlayer insulation layer including an interconnection line and formed on the substrate;

a condensing pattern having a first refractive index, and including a first region and a second region, wherein each of the first region and the second region concentrates light, wherein the first region is upwardly protruding from the interlayer insulation layer and the second region is buried in the interlayer insulation layer; and

a color filter formed on the first region and the second region of the condensing pattern to be directly contacted with the first region and the second region of the condensing pattern,

wherein the color filter covers an entire surface of the first region and the second region of the condensing pattern,

wherein the first region of the condensing pattern is not overlapped with the second region of the condensing pattern, and

wherein a top surface of the second region of the condensing pattern has a same level as a bottom surface of the first region of the condensing pattern.

2. The image sensor of claim 1 , wherein the first refractive index of the condensing pattern is larger than a second refractive index of the color filter.

3. The image sensor of claim 1 , wherein the condensing pattern includes a silicon nitride.

4. The image sensor of claim 1 , wherein the first region of the condensing pattern has a convex shape.

5. The image sensor of claim 1 , wherein the second region of the condensing pattern is disposed on an outer region of each pixel.

6. The image sensor of claim 1 , wherein the second region of the condensing pattern is in the shape of a ring that surrounds each pixel.

7. An image sensor having pixels, comprising:

a substrate including a photoelectric conversion region;

an interlayer insulation layer including an interconnection line, wherein the interlayer insulation layer is formed on the substrate;

a condensing pattern including a first region and a second region, wherein each of the first region and the second region concentrates light, wherein the first region has a first refractive index, and the second region has a second refractive index and is at least partially buried in the interlayer insulation layer; and

a color filter formed on the first region and the second region of the condensing pattern to be directly contacted with the first region and the second region of the condensing pattern,

wherein the color filter covers an entire surface of the first region and the second region of the condensing pattern,

wherein the first region of the condensing pattern is not overlapped with the second region of the condensing pattern, and

wherein a top surface of the second region of the condensing pattern has a same level as a bottom surface of the first region of the condensing pattern.

8. The image sensor of claim 7 , wherein the first refractive index is different than the second refractive index.

9. The image sensor of claim 7 , wherein the first region at least partially protrudes from the interlayer insulation layer.

10. The image sensor of claim 7 , wherein the second region forms a concentric shape on a periphery of each pixel.

11. The image sensor of claim 8 , wherein the first region at least partially protrudes from the interlayer insulation layer.

12. The image sensor of claim 9 , wherein the second region forms a concentric shape on a periphery of each pixel.

13. The image sensor of claim 8 , wherein the second region forms a concentric shape on a periphery of each pixel.

14. An image sensor, comprising:

a substrate including a photoelectric conversion region;

an interlayer insulation layer including an interconnection line and formed on the substrate;

a condensing pattern having a first refractive index, and including pluralities of first patterns and pluralities of second patterns, wherein each of the pluralities of first patterns and the pluralities of second patterns concentrates light; and

a color filter formed on the pluralities of first patterns and the pluralities of second patterns of the condensing pattern to be directly contacted with the pluralities of first patterns and the pluralities of second patterns of the condensing pattern,

wherein the color filter covers an entire surface of the pluralities of first patterns and the pluralities of second patterns of the condensing pattern,

wherein the pluralities of first patterns are upwardly protruded from the interlayer insulation layer and are disposed to have intervals apart from each other,

wherein each of the pluralities of second patterns is disposed under the intervals between the pluralities of first patterns and in the interlayer insulation layer, and

wherein the pluralities of first patterns of the condensing pattern are not overlapped with the pluralities of the second patterns of the condensing pattern, and

wherein a top surface of the pluralities of second patterns of the condensing pattern has a same level as a bottom surface of the pluralities of first patterns of the condensing pattern.

15. The image sensor of claim 14 , wherein the first refractive index of the condensing pattern is larger than a second refractive index of the color filter.

16. The image sensor of claim 14 , wherein the condensing pattern includes a silicon nitride.

17. The image sensor of claim 14 , wherein the pluralities of first patterns of the condensing pattern have convex shapes.

18. The image sensor of claim 14 , wherein the pluralities of second patterns of the condensing pattern are disposed on an outer region of each pixel.

19. The image sensor of claim 14 , wherein the pluralities of second patterns of the condensing pattern are in the shape of a ring that surrounds each pixel.