Solar cell having doped semiconductor heterojunction contacts
View Patent ↗A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.
1. A method of fabricating a solar cell, the method comprising:
providing a silicon substrate;
forming a tunnel oxide layer on a surface of the silicon substrate;
forming a first pattern of acceptor-doped semiconductor material over the tunnel oxide layer to create a plurality of emitters of a first type;
forming a second pattern of donor-doped semiconductor material over the tunnel oxide layer and interleaved with the first pattern to create a plurality of emitters of a second type; and
forming a first conductive pattern interconnecting the acceptor-doped semiconductor material; and
forming a second conductive pattern interconnecting the donor-doped semiconductor material.
2. The method of claim 1 , wherein the tunnel oxide layer comprises silicon oxide.
3. The method of claim 1 , wherein the surface of the silicon substrate is opposite a light-receiving surface of the silicon substrate.