SEMICONDUCTOR DEVICE HAVING INSULATING LAYERS CONTAINING OXYGEN AND A BARRIER LAYER CONTAINING MANGANESE

1 . A semiconductor device comprising:

an insulating layer formed over a semiconductor substrate, the insulating layer containing oxygen;

a wire formed in the insulating layer, the wire containing copper;

a structure formed in the wire, the structure containing oxygen; and

an oxide layer formed between the wire and the structure, or between the wire and the insulating layer, the oxide layer containing manganese.

2 . The semiconductor device according to claim 1 , wherein the structure has a grooved shape.

3 . The semiconductor device according to claim 1 , wherein the structure substantially includes the same substance as the insulating layer.

4 . A method of manufacturing a semiconductor device comprising:

forming a first insulating layer over a semiconductor substrate, the insulating layer containing oxygen;

forming a first wire in the first insulating layer;

forming a second insulating layer over the first insulating layer and the first wire, the second insulating layer containing oxygen;

selectively removing the second insulating layer to form a first groove over the first insulating layer;

selectively removing the second insulating layer on the inner wall of the first groove to form a first opening exposing the first wire formed under the first groove, and a second opening extending downwardly but spaced apart from the first wire;

forming a first metal layer over the inner wall of the first groove, the first opening and the second opening, the first metal layer containing manganese;

forming a second metal layer in the first groove, the first opening and the second opening, the second metal layer containing copper; and

performing a heat treatment to form a barrier layer between the second metal layer and the second insulating layer, the barrier layer containing manganese oxide.