Semiconductor device having fin gate, resistive memory device including the same, and method of manufacturing the same

1. A semiconductor device, comprising:

an active pillar formed on a semiconductor substrate, and including a first region and a second region surrounding at least one surface of the first region;

a fin gate extending to overlap an upper surface and a lateral surface of the active pillar; and

a gate insulating layer interposed between the active pillar and the fin gate,

wherein the first region of the active pillar is formed of a semiconductor layer having a lattice constant smaller than that of the second region of the active pillar,

wherein the second region includes Si,

wherein the first region includes SiC, AlN, GaN, ZnS, ZnO, ZnSe, CdS, BR or InN, and

wherein a stress for improving a current mobility is applied to the first region by a difference of the lattice constants between the first region and the second region.

2. The semiconductor device of claim 1 , wherein the active pillar has a longitudinal axis extending in a direction substantially perpendicular to a longitudinal axis of the fin gate, and

the first region extends to a direction substantially parallel to the longitudinal axis of the active pillar.

3. The semiconductor device of claim 1 , wherein the first region is an SiC layer and the first region is formed of a first C-low concentration-SiC layer that contains a content of C below a stoichiometric content of C in SiC, a C-high concentration-SiC layer that contains a content of C above the stoichiometric content of C in SiC, and a second C-low concentration-SiC layer that contains a content of C below the stoichiometric content of C in SiC.

4. The semiconductor device of claim 1 , further comprising:

a P type source formed in the active pillar on one side of the fin gate; and

a P type drain formed in the active pillar on a second side of the fin gate.

5. The semiconductor device of claim 1 , wherein the first region is formed to be exposed through the upper surface of the active pillar.

6. The semiconductor device of claim 5 , wherein the semiconductor layer is a SiC layer and the semiconductor layer is formed of a first C-low concentration-SiC layer that contains a content of C below a stoichiometric content of C in SIC, a C-high concentration-SiC layer that contains a content of C above the stoichiometric content of C in SiC, and a second C-low concentration-SiC layer that contains a content of C below the stoichiometric content of C in SiC.

7. The semiconductor device of claim 6 , wherein the C-high concentration-SIC layer is formed to be interposed between the first C-low concentration-SiC layer and the second C-low concentration-SiC layer.

8. A variable resistive memory device, comprising:

an active pillar including an inner region, an outer region formed to surround at least one surface of the inner region, and a P-type source and a P-type drain located at different sides of the inner region;

a fin gate extending to surround an upper surface and a lateral surface of the inner region of the active pillar;

a gate insulating layer interposed between the active pillar and the fin gate; and

a variable resistor electrically coupled to the drain,

wherein the active pillar is formed in such a manner that compressive stress is caused in a junction interface between the inner region and the outer region.

9. The variable resistive memory device of claim 8 , wherein the inner region of the active pillar is formed of a material having a lattice constant smaller than that of the outer region.

10. The variable resistive memory device of claim 9 , wherein the inner region includes one selected from the group consisting of SiC, AlN, GaN, ZnS, ZnO, ZnSe, CdS, BP, and InP, and

the outer region includes a silicon (Si) layer.

11. The semiconductor device of claim 3 , further comprising:

a source formed in one side of the active pillar on the basis of the fin gate; and

a drain formed in other side of the active pillar on the basis of the fin gate.

12. The semiconductor device of claim 1 , wherein the semiconductor substrate includes Si.