SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS
A substrate treatment method is provided which includes: a treatment liquid supplying step of supplying a treatment liquid to a major surface of a substrate; a substrate rotating step of rotating the substrate while retaining a liquid film of the treatment liquid on the major surface of the substrate; a heater heating step of locating a heater in opposed relation to the major surface of the substrate to heat the treatment liquid film by the heater in the substrate rotating step; and a heat amount controlling step of controlling the amount of heat to be applied per unit time to a predetermined portion of the liquid film from the heater according to the rotation speed of the substrate in the heater heating step.
1 . A substrate treatment method comprising:
a treatment liquid supplying step of supplying a treatment liquid to a major surface of a substrate;
a substrate rotating step of rotating the substrate while retaining a liquid film of the treatment liquid on the major surface of the substrate;
a heater heating step of locating a heater in opposed relation to the major surface of the substrate to heat the treatment liquid film by the heater in the substrate rotating step; and
a heat amount controlling step of controlling an amount of heat to be applied per unit time to a predetermined portion of the liquid film from the heater according to a rotation speed of the substrate in the heater heating step.
2 . The substrate treatment method according to claim 1 , wherein the heat amount controlling step includes a heater output controlling step of controlling an output of the heater according to the rotation speed of the substrate.
3 . The substrate treatment method according to claim 1 , further comprising a heater moving step of moving the heater along the major surface of the substrate,
wherein the heat amount controlling step includes a heater moving speed controlling step of controlling a moving speed of the heater according to the rotation speed of the substrate.
4 . The substrate treatment method according to claim 1 , wherein the heat amount controlling step includes the step of determining the heat amount per unit time based on a relational table indicating a relationship between the rotation speed of the substrate and the amount of the heat to be applied per unit time from the heater.
5 . The substrate treatment method according to claim 1 , wherein the heat amount controlling step includes the step of referring to a recipe stored in a recipe storing unit and determining the heat amount per unit time based on a rotation speed of the substrate specified in the recipe to be employed in the substrate rotating step.
6 . The substrate treatment method according to claim 1 , wherein the treatment liquid includes a resist lift-off liquid containing sulfuric acid.
7 . The substrate treatment method according to claim 1 , wherein the treatment liquid includes a chemical liquid containing an ammonia water.
8 . A substrate treatment apparatus comprising:
a substrate holding unit which holds a substrate;
a substrate rotating unit which rotates the substrate held by the substrate holding unit;
a treatment liquid supplying unit which supplies a treatment liquid to a major surface of the substrate held by the substrate holding unit;
a heater to be located in opposed relation to the major surface of the substrate; and
a control unit which controls the substrate rotating unit and the heater to perform a substrate rotating step of rotating the substrate while retaining a liquid film of the treatment liquid on the major surface of the substrate, a heater heating step of heating the treatment liquid film by the heater in the substrate rotating step, and a heat amount controlling step of controlling an amount of heat to be applied per unit time to a predetermined portion of the liquid film from the heater according to a rotation speed of the substrate in the heater heating step.