Photodiode of high quantum efficiency
A photodiode includes at least one central pad arranged on a light-receiving surface of a photodiode semiconductor substrate. The pad is made of a first material and includes lateral sidewalls surrounded by a spacer made of a second material having a different optical index than the first material. The lateral dimensions of the pad are smaller than an operating wavelength of the photodiode. Both the first and second materials are transparent to that operating wavelength. The pads and spacers are formed at a same time gate electrodes and sidewall spacers of MOS transistors are formed.
1. A photosensor, comprising:
a semiconductor substrate formed of a transparent material having a substrate optical index and having a photosensitive region with a light receiving surface;
a plurality of pads formed of a transparent material having a first optical index smaller than or equal to the substrate optical index, said plurality of pads positioned over the photosensitive region;
a spacer on the sidewall of each pad of the plurality of pads, said spacer formed of a transparent material having a second optical index smaller than or equal to the substrate optical index, wherein the spacers for the plurality of pads are separated from each other; and
a protection layer over the light receiving surface and coating the plurality of pads and separated spacers, said protection layer formed of a transparent material having a third optical index less than both the first and second optical indices.
2. The photosensor of claim 1 , wherein the light-receiving surface is divided into a plurality of light receiving areas, one area associated with a photodiode of said photosensitive region, and wherein a lateral dimension of each light receiving area is in the order of one operating wavelength.
3. The photosensor of claim 2 , wherein each light receiving area includes a single pad of said plurality of pads.
4. The photosensor of claim 1 , wherein the light-receiving surface includes a light receiving area associated with a photodiode of said photosensitive region, and wherein a lateral dimension of the light receiving area is in the order of a plurality of operating wavelengths.
5. The photosensor of claim 4 , wherein said light receiving area includes multiple pads of said plurality of pads.
6. The photosensor of claim 5 , wherein the plurality of pads are arranged in an array having a placement pitch.
7. The photosensor of claim 6 , wherein the placement pitch is in the order of one operating wavelength of the photodiode.
8. The photosensor of claim 1 , wherein the semiconductor substrate is formed of silicon, and wherein the pads are formed of polysilicon and wherein the spacers are formed of silicon nitride.
9. The photosensor of claim 1 , wherein the protection layer is made of a material having a third optical index smaller than the first and second optical indices.
10. The photosensor of claim 1 , wherein each pad of said plurality of pads is in direct contact with said light-receiving surface.
11. The photosensor of claim 1 , wherein each pad of said plurality of pads is separated from said light-receiving surface by a distance which is less than 10 nm.
12. A photosensor, comprising:
a semiconductor substrate having a substrate optical index and including a light receiving surface associated with a first photodiode and a second photodiode;
a first pad formed of a transparent material having a first optical index smaller than or equal to the substrate optical index, said first pad positioned to at least partially cover said first photodiode;
a second pad formed of said transparent material having the first optical index smaller than or equal to the substrate optical index, said second pad positioned to at least partially cover said second photodiode;
a first sidewall spacer formed of a transparent material having a second optical index smaller than or equal to the substrate optical index, said first sidewall spacer positioned on a sidewall of said first pad;
a second sidewall spacer formed of said transparent material having the second optical index smaller than or equal to the substrate optical index, said second sidewall spacer positioned on a sidewall of said second pad;
wherein the first and second sidewall spacers are separated from each other; and
an insulating layer formed of a transparent material having a third optical index less than the first and second optical indices, said insulating layer covering the first and second pads and first and second sidewall spacers.
13. A photosensor, comprising:
a semiconductor substrate having a substrate optical index and including a light receiving surface associated with a pinned photodiode;
a first pad formed of a transparent material having a first optical index smaller than or equal to the substrate optical index, said first pad positioned to partially cover said pinned photodiode;
a second pad formed of said transparent material having the first optical index smaller than or equal to the substrate optical index, said second pad positioned to partially cover said pinned photodiode;
a first sidewall spacer formed of a transparent material having a second optical index smaller than or equal to the substrate optical index, said first sidewall spacer positioned on a sidewall of said first pad;
a second sidewall spacer formed of said transparent material having the second optical index smaller than or equal to the substrate optical index, said second sidewall spacer positioned on a sidewall of said second pad;
wherein the first and second sidewall spacers are separated from each other; and
an insulating layer formed of a transparent material having a third optical index less than the first and second optical indices, said insulating layer covering the first and second pads and first and second sidewall spacers.