Tunable electrical conductivity in metal-organic framework thin film devices
A composition including a porous metal organic framework (MOF) including an open metal site and a guest species capable of charge transfer that can coordinate with the open metal site, wherein the composition is electrically conductive. A method including infiltrating a porous metal organic framework (MOF) including an open metal site with a guest species that is capable of charge transfer; and coordinating the guest species to the open metal site to form a composition including an electrical conductivity greater than an electrical conductivity of the MOF.
1. A composition comprising:
a porous metal organic framework (MOF) comprising an open metal site, wherein the MOF comprises a plurality of metal ions or metal clusters and a plurality of organic ligands, and
a guest species capable of charge transfer that can coordinate with the open metal site and located within a pore of the MOF,
wherein the composition is electrically conductive.
2. The composition of claim 1 , wherein the guest species comprises a delocalized π electron.
3. The composition of claim 1 , wherein the MOF comprises copper.
4. The composition of claim 3 , wherein the MOF comprises Cu 3 (BTC) 2 .
5. The composition of claim 3 , wherein the guest species comprises a nitrile moiety, a thiol moiety, or a carbonyl moiety.
6. A composition comprising:
a porous metal organic framework (MOF) comprising an open metal site and a guest species capable of charge transfer that can coordinate with the open metal site, wherein the composition is electrically conductive, wherein the guest species comprises 7,7,8,8-tetracyanoquinododimethane.
7. The composition of claim 6 , wherein the MOF comprises Cu 3 (BTC) 2 .
8. The composition of claim 1 , wherein the guest species is selected from the group consisting of a nitrile moiety, a thiol moiety, a carbonyl moiety, a thiolate moiety, an amine moiety, an imine moiety, a hydroxyl moiety, or a mixture thereof.
9. The composition of claim 1 , wherein the guest species is selected from the group consisting of a thiophene, a dithiopene, a tetrathiafulvalene, an imidazole, a triazole, a tetrazole, or a derivative thereof or a transition metal complex operable to undergo an outer sphere electron transfer.
10. An organic semiconductor device comprising the composition of claim 1 .
11. The composition of claim 5 , wherein the guest species comprises a plurality of nitrile moieties.
12. A composition comprising:
a porous metal organic framework (MOF) comprising an open metal site, wherein the MOF comprises a plurality of metal ions or metal clusters and a plurality of organic ligands; and
a guest species capable of charge transfer that can coordinate with the open metal site and located within a pore of the MOF,
wherein the composition has an electrical conductivity that is tuned by an extent of infiltration of the guest species into one or more pores of the MOF.
13. The composition of claim 12 , wherein the guest species comprises a delocalized π electron.
14. The composition of claim 12 , wherein the MOF comprises copper.
15. The composition of claim 14 , wherein the MOF comprises Cu 3 (BTC) 2 .
16. The composition of claim 14 , wherein the guest species comprises a nitrile moiety, a thiol moiety, or a carbonyl moiety.
17. The composition of claim 16 , wherein the guest species comprises a plurality of nitrile moieties.
18. The composition of claim 12 , wherein the guest species is selected from the group consisting of a nitrile moiety, a thiol moiety, a carbonyl moiety, a thiolate moiety, an amine moiety, an imine moiety, a hydroxyl moiety, or a mixture thereof.
19. The composition of claim 12 , wherein the guest species is selected from the group consisting of a thiophene, a dithiopene, a tetrathiafulvalene, an imidazole, a triazole, a tetrazole, or a derivative thereof or a transition metal complex operable to undergo an outer sphere electron transfer.
20. An organic semiconductor device comprising the composition of claim 12 .