Authorizing the use of a biometric card
View Patent ↗Embodiments of the present invention provide a system and method for authorizing the use of a biometric transaction card. Specifically, embodiments of the present invention provide a biometric card having a biometric sensor to determine whether the biometric information (fingerprint) is from human skin. In a typical embodiment, the cardholder approaches a magnetic reader with the card. The user places his/her finger on the SpO 2 sensor of the card. The sensor estimates the SpO 2 level. Card authorization is based, in part, on the estimated SpO 2 level.
1. A method for authorizing the use of a biometric card, comprising:
powering up the card;
sensing a fingerprint of the finger;
authenticating the sensed fingerprint information;
sensing a finger on an SpO 2 sensor of the card;
powering on a red laser and a photodetector;
performing analog-to-digital conversion on reflective light scattering from the red laser received by the photodetector;
powering off the red laser;
powering on an infrared (IR) laser of the card;
performing analog-to-digital conversion on reflective light scattering from the IR laser received by the photodetector;
powering off the IR laser and the photodetector;
estimating an SpO 2 level of the finger; and
authorizing the use of the card based on the fingerprint authentication and the SpO 2 level estimate.
2. The method of claim 1 , wherein a sensor is used to estimate the SpO 2 level of the card user.
3. The method of claim 2 , wherein the sensor includes the red laser, the infrared (IR) laser, and the photodetector.
4. The method of claim 3 , wherein the red laser is a vertical-cavity surface-emitting laser.
5. The method of claim 3 , wherein the infrared (IR) laser is a vertical-cavity surface-emitting laser.
6. The method of claim 2 , wherein the sensor comprises a multi-sided configuration.
7. The method of claim 2 , wherein the sensor comprises a transparent configuration.
8. The method of claim 3 , wherein the red laser structure comprises n-Substrate, n-type Bragg reflector, p-type Bragg reflector, and quantum well layers.
9. The method of claim 3 , wherein the infrared (IR) laser structure comprises n-Substrate, n-type Bragg reflector, p-type Bragg reflector, and quantum well layers.
10. The method of claim 3 , wherein the photodetector structure comprises an intrinsic semiconductor region, a p-type region, and an n-type region.
11. The method of claim 1 , wherein a fingerprint sensor senses the fingerprint of the card user, and an authenticator authenticates the sensed fingerprint information.
12. The method of claim 1 , further comprising:
the photodetector generating a first photocurrent signal based on the reflective scattering of the red laser light;
generating a second photocurrent signal based on the reflective scattering of the IR laser light;
converting, by an analog-to-digital converter, the first photocurrent signal to a first waveform;
converting, by the analog-to-digital converter, the second photocurrent signal to a second waveform;
wherein the SpO 2 level is estimated based on a ratio of the first and second waveforms.
13. A method for authorizing the use of a biometric card, comprising:
powering up the card;
sensing a fingerprint of the finger;
authenticating the sensed fingerprint information;
sensing a finger on an SpO 2 sensor of the card;
powering on a first laser and at least one photodetector;
performing analog-to-digital conversion on reflective light scattering from the first laser received by the at least one photodetector;
powering off the first laser;
powering on a second laser;
performing analog-to-digital conversion on reflective light scattering from the IR laser received by the at least one photodetector;
powering off the IR laser and the at least one photodetector;
estimating an SpO 2 level of the finger; and
authorizing the use of the card based on the fingerprint authentication and the SpO 2 level estimate.
14. The method of claim 1 , wherein a sensor is used to estimate the SpO 2 level of the card user.
15. The method of claim 14 , wherein the sensor includes the first laser, the second laser, and the at least one photodetector, the first laser comprising a red laser, and the second laser comprising an infrared (IR) laser.
16. The method of claim 15 , wherein the red laser is a vertical-cavity surface-emitting laser.
17. The method of claim 15 , wherein the infrared (IR) laser is a vertical-cavity surface-emitting laser.
18. The method of claim 14 , wherein the sensor comprises a multi-sided configuration.
19. The method of claim 14 , wherein the sensor comprises a transparent configuration.
20. The method of claim 15 ,
wherein the red laser structure comprises n-Substrate, n-type Bragg reflector, p-type Bragg reflector, and quantum well layers;
wherein the infrared (IR) laser structure comprises n-Substrate, n-type Bragg reflector, p-type Bragg reflector, and quantum well layers; and
wherein the at least one photodetector structure comprises an intrinsic semiconductor region, a p-type region, and an n-type region.