Internal voltage generating circuit capable of controlling swing width of detection signal in semiconductor memory apparatus
An internal voltage generating circuit capable of controlling a swing width of a detection signal in a semiconductor memory apparatus is provided. The internal voltage generating circuit of a semiconductor memory apparatus includes an internal voltage level detecting unit configured to compare an internal voltage with a target voltage and then generate a detection signal, and an internal voltage level control unit configured to control the internal voltage based on a voltage level of the detection signal, wherein the internal voltage level detecting unit is configured to control a swing width of the detection signal based on a voltage difference between the internal voltage and the target voltage.
1. An internal voltage generating circuit of a semiconductor memory apparatus comprising:
a comparison unit configured to generate a preliminary detection signal by comparing an internal voltage with a reference voltage;
an A/D converting unit configured to generate a code based on the internal voltage;
a code voltage generating unit configured to output a code voltage corresponding to the code;
a code detection unit configured to generate a control signal which is enabled when a value of the code is lower than a predetermined code value;
a control-voltage-level controlling unit configured to output a control voltage which is at a ground voltage level when the control signal is enabled and to output the control voltage corresponding to the code voltage when the control signal is disabled;
a driving unit configured to output a detection signal by receiving an external voltage and the control voltage as driving voltages and then driving the preliminary detection signal; and
an internal voltage level control unit configured to increase the internal voltage as a voltage level of the detection signal is lowered.
2. The internal voltage generating circuit of claim 1 , wherein the control-voltage-level controlling unit comprises:
a voltage maintaining unit configured to compare a divided voltage of the reference voltage with the code voltage and then maintain the control voltage which is higher than the ground voltage level when the control signal is disabled; and
a discharging unit configured to lower the control voltage to the ground voltage level when the control signal is enabled.
3. The internal voltage generating circuit of claim 2 , wherein the code detection unit includes a decoder corresponding to each of the code values of the predetermined code.
4. The internal voltage generating circuit of claim 2 , wherein the code voltage generating unit is configured to increase the code voltage by increasing a number of transistors which are turned on based on the code value.