Semiconductor storage device having nand-type flash memory

1. A semiconductor storage device comprising:

a plurality of memory cell transistors including memory cell transistors that are connected to each other in series;

a plurality of word lines that are connected to the plurality of memory cell transistors; and

a control circuit configured to apply a first potential to a selected one of the plurality of word lines, and a second potential that is higher than the first potential to the word lines that are not selected at different timings before the first potential is applied to the selected word line.

2. The semiconductor storage device according to claim 1 , wherein

the plurality of word lines are arranged in a matrix configuration such that the non-selected word lines include first and second non-selected word lines that are adjacent to the selected word line on opposite sides of the selected word line, and

the control circuit is configured to apply the second potential to the first and second non-selected word lines at different timings.

3. The semiconductor storage device according to claim 2 , wherein

the plurality of word lines extend in a first direction and have a width in a second direction and a thickness in a third direction, and

the first and second non-selected word lines are arranged on opposite sides of the selected word line along the third direction.

4. The semiconductor storage device according to claim 3 , wherein

the non-selected word lines include third and fourth non-selected word lines that are adjacent to the selected word line on opposite sides of the selected word line in the second direction, and

the control circuit is configured to apply the second potential to the third and fourth non-selected word lines at the same timing.

5. The semiconductor storage device according to claim 4 , wherein

the control circuit is configured to apply the second potential to the first non-selected word line at a first timing, to the second non-selected word line at a second timing that is later than the first timing, and to the third and fourth non-selected word lines at a third timing that is later than the second timing.

6. The semiconductor storage device according to claim 5 , wherein

the non-selected word lines include fifth, sixth, seventh, and eighth non-selected word lines that are diagonally adjacent to the selected word line, and

the control circuit is configured to apply the second potential to the fifth, sixth, seventh, and eighth non-selected word lines at a fourth timing that is later than the third timing.

7. The semiconductor storage device according to claim 6 , wherein

the control circuit is configured to place the plurality of non-selected word lines into a floating state before the second potential is applied thereto.

8. A semiconductor storage device comprising:

a plurality of memory cell transistors including memory cell transistors that are connected to each other in series;

a plurality of word lines that are connected to the plurality of memory cell transistors and arranged in rows and columns; and

a control circuit configured to apply a first potential to a selected one of the plurality of word lines, and a second potential that is higher than the first potential to the word lines that are not selected at different timings before the first potential is applied to the selected word line, wherein the different timings at which the second potential is applied to each non-selected word line are determined according to a row position of the non-selected word line.

9. The semiconductor storage device according to claim 8 , wherein

the plurality of word lines are grouped into multiple groups of adjacent rows and the different timings at which the second potential is applied to each non-selected word line are determined according to which group the non-selected word line belongs.

10. The semiconductor storage device according to claim 9 , wherein

the plurality of word lines are stacked above a substrate, and

the non-selected word lines belonging to a first group that is farther from the substrate than a second group, have less number of different timings at which the second potential is applied than the non-selected word lines belonging to the second group.

11. The semiconductor storage device according to claim 9 , wherein

the plurality of word lines extend in a first direction and have a width in a second direction and a thickness in a third direction, and the non-selected word lines include first and second non-selected word lines arranged on opposite sides of the selected word line along the third direction, third and fourth non-selected word lines arranged on opposite sides of the selected word line along the second direction, and fifth, sixth, seventh, and eighth non-selected word lines that are diagonally adjacent to the selected word line, and

the multiple groups include a first group and a second group, and the second potential is applied to the first through eighth non-selected word lines at three different timings if the first through eighth non-selected word lines are in the first group and at five different timings if the first through eighth non-selected word lines are in the second group.

12. The semiconductor storage device according to claim 11 , wherein

the plurality of word lines are stacked above a substrate and the first group is located farther from the substrate than the second group.

13. The semiconductor storage device according to claim 12 , wherein

the control circuit is configured to place the plurality of non-selected word lines into a floating state before the second potential is applied thereto.